BAT854AW,115 NXP Semiconductors, BAT854AW,115 Datasheet - Page 4

• Manufacturer Part Number: BAT854AW,115
• Description: DIODE SCHTK DUAL 40V 200MASOT323
• Manufacturer: NXP Semiconductors

Specifications of BAT854AW,115

• Package / Case: SC-70-3, SOT-323-3
• Voltage - Forward (vf) (max) @ If: 550mV @ 100mA
• Current - Reverse Leakage @ Vr: 500nA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 1 A
• Configuration: Dual Common Anode
• Forward Voltage Drop: 0.55 V @ 0.1 A
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056165115; BAT854AW T/R; BAT854AW T/R

NXP Semiconductors
GRAPHICAL DATA
2001 Feb 27
handbook, halfpage
handbook, halfpage
Schottky barrier (double) diodes
(1) T
(2) T
(3) T
Fig.6
f = 1 MHz; T
Fig.8
(mA)
(pF)
10
C d
I F
10
10
20
16
12
10
−1
amb
amb
amb
8
4
0
1
3
2
0
0
= 125 °C.
= 85 °C.
= 25 °C.
(1)
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
= 25 °C.
(2)
10
(3)
0.4
20
0.8
30
V F (V)
V R (V)
MLD548
MLD546
1.2
40
4
handbook, halfpage
(1) T
(2) T
(3) T
Fig.7
(μA)
10
10
I R
10
10
−1
amb
amb
amb
1
3
2
0
= 125 °C.
= 85 °C.
= 25 °C.
Reverse current as a function of reverse
voltage; typical values.
10
(1)
(2)
(3)
20
BAT854W series
30
Product data sheet
V R (V)
MLD547
40