UMP1NTR Rohm Semiconductor, UMP1NTR Datasheet
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Manufacturer Part Number
UMP1NTR
Description
DIODE SWITCH 80V 25MA SOT-353 TR
Manufacturer
Rohm Semiconductor
Specifications of UMP1NTR
Voltage - Forward (vf) (max) @ If
900mV @ 5mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
25mA
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Pair Common Anode
Mounting Type
Surface Mount
Package / Case
SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Diodes
Switching diode
UMP1N
Ultra high speed switching
1) Small mold type. (UMD5)
2) High reliability
Silicon epitaxial planar
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Re
Re
Forw
A
Surge peak （t=1us）
Po
Ju
S
Application
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
verage rectified forward current(Single)
torage temperature
nction temperature
wer dissipation
verse voltage (repetitive peak)
verse voltage (DC)
ard current (Single)
Parameter
Parameter
Symbol
V
Ct
trr
I
R
F
External dimensions (Unit : mm)
Taping specifications (Unit : mm)
0.25±
Symbol
I
Tstg
V
surge
V
I
Pd
(5)
(1)
Io
Tj
0.65
FM
Min.
RM
R
0.1
0.05
-
-
-
-
2.0±0.2
1.3±0.1
Each lead has same dimension
各リードとも
(2)
同寸法
0.65
2.25±0.1
0
4.0±0.1
Typ.
-
-
-
-
-55 to +150
(3)
(4)
Limits
Max.
2.0±0.05
250
150
150
0.9
0.1
3.5
dot (year week factory)
80
80
80
25
4
JEITA : SC-88A
JEDEC : SOT-353
ROHM : UMD5
0.15±0.05
4.0±0.1
Unit
µA
0.9±0.1
pF
ns
V
0.7
φ1.55±0.1
0
I
V
V
V
Unit
mW
mA
mA
mA
F
℃
℃
V
V
=5mA
R
R
R
0～0.1
=70V
=6V , f=1MHz
=6V , IF=5mA , RL=50Ω
φ1.1±0.1
Conditions
Land size figure (Unit : mm)
Structure
UMD5
Rev.B
0.35
0.65
UMP1N
0.65
0.3±0.1
1.15±0.1
1/2
Related parts for UMP1NTR
UMP1NTR Summary of contents
Diodes Switching diode UMP1N Application Ultra high speed switching Features 1) Small mold type. (UMD5) 2) High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Re verse voltage (repetitive peak) Re verse voltage (DC) Forw ard current (Single) ...
Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=75℃ Ta=125℃ 10 Ta=150℃ Ta=25℃ Ta=-25℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 770 Ta=25℃ IF=5mA 760 n=30pcs 750 740 730 AVE:744.4mV 720 VF ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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