UMR12NTN Rohm Semiconductor, UMR12NTN Datasheet

DIODE SW 80V 100MA SOT-363 TR

UMR12NTN

Manufacturer Part Number
UMR12NTN
Description
DIODE SW 80V 100MA SOT-363 TR
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of UMR12NTN

Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 80V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
80V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Diodes
Switching diode
UMR12N
Ultra high speed switching
1) Small mold type. (SMD6)
2) High reliability
Silicon epitaxial planar
For
Reverse current
C
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (Single)
Average rectified forward current (Single)
Surge current (t=1us)
Power dissipation
Junction temperature
Storage temperature
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
apacitance between terminals
ward voltage
Parameter
Parameter
External dimensions (Unit : mm)
Taping specifications (Unit : mm)
Symbol
0.25±
2.2±0.1
4.0±0.1
V
Ct
I
R
(6)
(1)
F
0.65
0.1
0.05
Symbol
2.0±0.2
1.3±0.1
I
Tstg
V
surge
I
V
Pd
Io
Tj
Each lead has same dimension
各リードとも
FM
RM
R
(5)
(2)
同寸法
0.65
2.0±0.05
Min.
-
-
-
(3)
(4)
dot (year week factory)
4.0±0.1
JEITA : SC-88
JEDEC : SOT-363
ROHM : UMD6
Typ.
-55 to +150
-
-
-
φ1.5±0.1
      0
Limits
0.15±0.05
200
100
200
150
80
80
0.9±0.1
4
0.7
Max.
1.2
0.1
3.5
0~0.1
φ1.1±0.1
Unit
µA
pF
V
Land size figure (Unit : mm)
UMD6
mW
Structure
Unit
mA
mA
V
V
A
I
V
V
F
=100mA
R
R
0.65
=80V
=6V , f=1MHz
0.35
Conditions
0.65
Rev.A
0.3±0.1
UMR12N
1.15±0.1
1/3

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UMR12NTN Summary of contents

Page 1

Diodes Switching diode UMR12N Applications Ultra high speed switching Features 1) Small mold type. (SMD6) 2) High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (Single) Average rectified forward ...

Page 2

Diodes Electrical characteristic curves (Ta=25°C) 100 D1 Ta=75℃ Ta=125℃ 10 Ta=-25℃ Ta=150℃ Ta=25℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 1000 1100 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS Ta=150℃ Ta=125℃ 100 D2 10 Ta=75℃ 1 Ta=25℃ 0.1 ...

Page 3

Diodes 5 Ct13 Ta=25℃ VR=0V 4 f=1MHz n=10pcs AVE:3.64pF DISPERSION MAP 10 VR= Ifsm t 0 100 TIME:t(ms) IFSM-t CHARACTERISTICS AVE:13.56kV ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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