UMN11NTN Rohm Semiconductor, UMN11NTN Datasheet
UMN11NTN
Manufacturer Part Number
UMN11NTN
Description
DIODE SW 80V 100MA SOT-363 TR
Manufacturer
Rohm Semiconductor
Datasheet
1.UMN11NTN.pdf
(3 pages)
Specifications of UMN11NTN
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Forward Current If(av)
100mA
Repetitive Reverse Voltage Vrrm Max
80V
Forward Voltage Vf Max
1.2V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Operating
RoHS Compliant
Product
Switching Diodes
Peak Reverse Voltage
80 V
Forward Continuous Current
0.3 A
Max Surge Current
4 A
Configuration
Double Dual Common Cathode
Recovery Time
4 ns
Forward Voltage Drop
1.2 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UMN11NTN
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Switching diode
UMN11N
Ultra high speed switching
1) Small mold type. (UMD6)
2) High reliability
Silicon epitaxial planar
Re
R
Forw
A
Su
Po
J
S
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Application
Features
Construction
unction temperature
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
everse voltage (DC)
verage rectified forward current (Single)
torage temperature
rge current （t=1us）
wer dissipation
verse voltage (repetitive peak)
ard current (Single)
Parameter
Parameter
External dimensions (Unit : mm)
Taping specifications (Unit : mm)
0.25±
Symbol
Symbol
I
Tstg
V
surge
I
V
Pd
V
(6)
(1)
Ct
trr
Io
Tj
FM
I
0.65
RM
R
R
0.1
0.05
F
2.0±0.2
1.3±0.1
各リードとも
Each lead has same dimension
(5)
(2)
同寸法
0.65
2.2±0.1
4.0±0.1
Min.
-
-
-
-
-55 to +150
(3)
(4)
dot (year week factory)
2.0±0.05
Limits
300
100
150
150
Typ.
80
80
JEITA : SC-88
4
JEDEC : SOT-363
ROHM : UMD6
-
-
-
-
4.0±0.1
0.15±0.05
Max.
1.2
0.1
3.5
0.9±0.1
4
0.7
φ1.5±0.1
0
Unit
mW
Unit
mA
mA
0～0.1
µA
pF
ns
℃
℃
V
V
A
V
φ1.1±0.1
I
V
V
V
F
=100mA
R
R
R
=70V
=6V , f=1MHz
=6V , IF=5mA , RL=50Ω
Land size figure (Unit : mm)
Structure
Conditions
UMD6
Rev.B
0.65
0.35
UMN11N
0.65
0.3±0.1
1.15±0.1
1/2
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UMN11NTN Summary of contents
Page 1
Diodes Switching diode UMN11N Application Ultra high speed switching Features 1) Small mold type. (UMD6) 2) High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Re verse voltage (repetitive peak) R everse voltage (DC) Forw ard current (Single) ...
Page 2
Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=75℃ Ta=125℃ Ta=25℃ 10 Ta=150℃ Ta=-25℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 100 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 950 Ta=25℃ IF=100mA 940 n=30pcs 930 920 910 AVE:921.7m 900 VF ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...