UMN10NTR Rohm Semiconductor, UMN10NTR Datasheet

DIODE SWITCH 80V 100MA SOT-363

UMN10NTR

Manufacturer Part Number
UMN10NTR
Description
DIODE SWITCH 80V 100MA SOT-363
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of UMN10NTR

Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Diodes
Switching diode
UMN10N
Very fast recovery
1) Small mold type. (UMD6)
2) High reliability
Silicon epitaxial planer
Forward voltage
Revers e current
Capacitance between term inal
Revers e recovery tim e
Revers e voltage (repetitive peak)
Revers e voltage (DC)
Forward current repetitive peak (Single)
Average rectified forward current (Single)
Surge current ( t=1us )
Power dis s ipation
Junction tem perature
Storage tem perature
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristic (Ta=25°C)
Param eter
Param eter
Taping dimensions (Unit : mm)
Sym bol
Sym bol
2.2±0.1
4.0±0.1
V
Ct
trr
External dimensions (Unit : mm)
Ts tg
I
I
V
R
surg e
I
Pd
F
V
Io
Tj
FM
0.25±
RM
R
(6)
(1)
0.65
0.1
0.05
2.0±0.2
1.3±0.1
Each lead has same dimension
各リードとも
2.0±0.05
Min.
(5)
(2)
同寸法
0.65
-
-
-
-
-55 to +150
(3)
(4)
Lim its
Typ.
dot (year week factory)
300
100
200
150
4.0±0.1
-
-
-
-
80
80
JEITA : SC-88
4
JEDEC : SOT-363
ROHM : UMD6
φ1.5±0.1
      0
Max.
1.2
0.1
3.5
0.15±0.05
4
0.9±0.1
0.7
0~0.1
Unit
µA
pF
ns
V
Unit
m W
m A
m A
φ1.1±0.1
V
V
A
I
V
V
V
F
R
R
R
=100m A
=70V
=6V , f=1MHz
=6V , IF=5m A , RL=50 Ω
Land size figure
Structure
UMD6
Conditions
0.65
0.35
Rev.A
0.65
UMN10N
0.3±0.1
1.15±0.1
1/2

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UMN10NTR Summary of contents

Page 1

Diodes Switching diode UMN10N Applications Very fast recovery Features 1) Small mold type. (UMD6) 2) High reliability Construction Silicon epitaxial planer Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25°C) Param eter Revers e voltage (repetitive peak) Revers e voltage ...

Page 2

Diodes Electrical characteristic curves 100 Ta=75℃ Ta=125℃ Ta=25℃ 10 Ta=150℃ Ta=-25℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 100 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 950 Ta=25℃ IF=100mA 940 n=30pcs 930 920 910 AVE:921.7mV 900 VF DISPERSION ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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