RB731XNTR Rohm Semiconductor, RB731XNTR Datasheet
RB731XNTR
Specifications of RB731XNTR
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RB731XNTR Summary of contents
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Diodes Schottky barrier diode RB731XN Applications General rectification Features 1) Small power mold type. (UMD6) 2) Low High reliability Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) ∗ Average rectified forward current Forward ...
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Diodes Electrical characteristic curves 100 Ta=125℃ 10 Ta=75℃ 1 Ta=-25℃ Ta=25℃ 0.1 0.01 0 100 200 300 400 500 600 700 800 900 1000 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 300 Ta=25℃ IF=1mA 290 n=30pcs 280 270 260 AVE:267.4mV 250 VF DIPERSION ...
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Diodes 0.1 Io Per chip 0A 0. D=t/T VR=15V 0.06 DC Tj=125℃ T D=1/2 0.04 0.02 Sin(θ＝180 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0.1 Per chip ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...