BYQ28E-200/H,127 NXP Semiconductors, BYQ28E-200/H,127 Datasheet - Page 2

• Manufacturer Part Number: BYQ28E-200/H,127
• Description: DIODE RECT UFAST 200V SOT78
• Manufacturer: NXP Semiconductors

Specifications of BYQ28E-200/H,127

• Package / Case: TO-220-3 (Straight Leads)
• Voltage - Forward (vf) (max) @ If: 1.25V @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 200 V
• Forward Continuous Current: 10 A
• Max Surge Current: 55 A
• Configuration: Dual Common Cathode
• Recovery Time: 25 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 10 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934062725127

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYQ28_SER_E_ED_4
Product data sheet
Type number
BYQ28E-200
BYQ28ED-200
Symbol
V
V
V
I
I
I
I
I
T
T
Electrostatic discharge
V
O(AV)
FRM
FSM
RM
RSM
stg
j
RRM
RWM
R
ESD
Ordering information
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
repetitive peak forward current
non-repetitive peak forward
current
peak reverse recovery current
non-repetitive peak reverse
current
storage temperature
junction temperature
electrostatic discharge voltage
Package
Name
TO-220AB
DPAK
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
plastic single-ended surface-mounted package (DPAK); 3-leads (one lead
cropped)
Conditions
square waveform;
square waveform;
T
t
T
t = 10 ms; sinusoidal waveform; per
diode
t = 8.3 ms; sinusoidal waveform; per
diode
t
t
all pins; human body model;
C = 250 pF; R = 1.5 k
p
p
p
mb
mb
Rev. 04 — 5 December 2007
= 25 s; square waveform; = 0.5;
= 2 s;
= 100 s
119 C; both diodes conducting
119 C; per diode
= 0.001
= 1.0
= 0.5;
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
Min
-
-
-
-
-
-
-
-
-
-
-
40
© NXP B.V. 2007. All rights reserved.
Max
200
200
200
10
10
50
55
0.2
0.2
+150
150
8
Version
SOT78
SOT428
Unit
V
V
V
A
A
A
A
A
A
kV
C
C
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