BYQ28E-200/H,127 NXP Semiconductors, BYQ28E-200/H,127 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BYQ28E-200/H,127
Manufacturer Part Number
BYQ28E-200/H,127
Description
DIODE RECT UFAST 200V SOT78
Manufacturer
NXP Semiconductors
Specifications of BYQ28E-200/H,127
Package / Case
TO-220-3 (Straight Leads)
Voltage - Forward (vf) (max) @ If
1.25V @ 10A
Current - Reverse Leakage @ Vr
10µA @ 200V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Product
Switching Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
10 A
Max Surge Current
55 A
Configuration
Dual Common Cathode
Recovery Time
25 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
10 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934062725127
NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYQ28_SER_E_ED_4
Product data sheet
Type number
BYQ28E-200
BYQ28ED-200
Symbol
V
V
V
I
I
I
I
I
T
T
Electrostatic discharge
V
O(AV)
FRM
FSM
RM
RSM
stg
j
RRM
RWM
R
ESD
Ordering information
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
repetitive peak forward current
non-repetitive peak forward
current
peak reverse recovery current
non-repetitive peak reverse
current
storage temperature
junction temperature
electrostatic discharge voltage
Package
Name
TO-220AB
DPAK
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
plastic single-ended surface-mounted package (DPAK); 3-leads (one lead
cropped)
Conditions
square waveform;
square waveform;
T
t
T
t = 10 ms; sinusoidal waveform; per
diode
t = 8.3 ms; sinusoidal waveform; per
diode
t
t
all pins; human body model;
C = 250 pF; R = 1.5 k
p
p
p
mb
mb
Rev. 04 — 5 December 2007
= 25 s; square waveform; = 0.5;
= 2 s;
= 100 s
119 C; both diodes conducting
119 C; per diode
= 0.001
= 1.0
= 0.5;
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
Min
-
-
-
-
-
-
-
-
-
-
-
40
© NXP B.V. 2007. All rights reserved.
Max
200
200
200
10
10
50
55
0.2
0.2
+150
150
8
Version
SOT78
SOT428
Unit
V
V
V
A
A
A
A
A
A
kV
C
C
2 of 10