BYQ28E-200/H,127 NXP Semiconductors, BYQ28E-200/H,127 Datasheet - Page 4

• Manufacturer Part Number: BYQ28E-200/H,127
• Description: DIODE RECT UFAST 200V SOT78
• Manufacturer: NXP Semiconductors

Specifications of BYQ28E-200/H,127

• Package / Case: TO-220-3 (Straight Leads)
• Voltage - Forward (vf) (max) @ If: 1.25V @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 200 V
• Forward Continuous Current: 10 A
• Max Surge Current: 55 A
• Configuration: Dual Common Cathode
• Recovery Time: 25 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 10 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934062725127

NXP Semiconductors
6. Characteristics
Table 5.
T
BYQ28_SER_E_ED_4
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
j
F
FR
r
= 25 C unless otherwise specified.
Characteristics
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery
voltage
Fig 2. Forward current as a function of forward voltage
(1) T
(2) T
(3) T
j
j
j
= 150 C; typical values
= 150 C; maximum values
= 25 C; maximum values
Conditions
I
I
I
V
V
I
see
ramp recovery; I
dI
step recovery; when switched from
I
I
I
see
I
F
F
F
F
F
R
F
F
R
R
F
= 5 A; T
= 5 A; see
= 10 A; see
= 2 A to V
= 0.5 A to I
= 5 A to V
= 1 A; dI
= 0.25 A
/dt = 100 A/ s; see
= 200 V
= 200 V; T
Figure 3
Figure 3
Rev. 04 — 5 December 2007
(A)
j
I
F
F
= 150 C; see
/dt = 10 A/ s; see
R
R
15
10
Figure 2
R
5
0
j
Figure 2
= 100 C
0
= 1 A; measured at
30 V; dI
30 V; dI
F
= 1 A to V
Figure 3
F
F
/dt = 20 A/ s;
/dt = 50 A/ s;
Figure 2
0.5
R
BYQ28 series E and ED
Figure 4
30 V;
(1)
1.0
(2)
Rectifier diodes ultrafast, rugged
V
Min
-
-
-
-
-
-
-
-
-
-
F
001aag978
(3)
(V)
1.5
Typ
0.8
0.95
1.1
2
0.1
4
15
10
0.5
1
© NXP B.V. 2007. All rights reserved.
Max
0.895
1.1
1.25
10
0.2
9
25
20
0.7
-
Unit
V
V
V
mA
nC
ns
ns
A
V
A
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