BAT120A,115 NXP Semiconductors, BAT120A,115 Datasheet - Page 4

• Manufacturer Part Number: BAT120A,115
• Description: DIODE SCHOTTKY 25V 1A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BAT120A,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Voltage - Forward (vf) (max) @ If: 450mV @ 1A
• Current - Reverse Leakage @ Vr: 1mA @ 25V
• Current - Average Rectified (io) (per Diode): 1A (DC)
• Voltage - Dc Reverse (vr) (max): 25V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 25 V
• Forward Continuous Current: 1 A
• Max Surge Current: 10 A
• Configuration: Dual
• Forward Voltage Drop: 400 mV
• Maximum Reverse Leakage Current: 1 mA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934051320115; BAT120A T/R; BAT120A T/R

NXP Semiconductors
GRAPHICAL DATA
2003 Aug 04
handbook, halfpage
handbook, halfpage
Schottky barrier double diodes
f = 1 MHz; T
(1) T
(2) T
Fig.3
Fig.5
(mA)
I F
(pF)
C d
10
10
10
10
10
10
10
amb
amb
1
4
3
2
3
2
0
0
= 125 °C.
= 100 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
= 25 °C.
200
10
(1)
(2)
(3)
(4)
400
(3) T
(4) T
20
amb
amb
600
= 75 °C.
= 25 °C.
V R (V)
V F (mV)
MBL886
MBK571
800
30
4
handbook, halfpage
(1) T
(2) T
Fig.4
(μA)
I R
10
10
10
10
10
amb
amb
1
5
4
3
2
0
= 125 °C.
= 100 °C.
Reverse current as a function of reverse
voltage; typical values.
10
(3) T
(4) T
BAT120 series
20
amb
amb
(1)
(2)
(3)
(4)
= 75 °C.
= 25 °C.
Product data sheet
V R (V)
MHB970
30