BYV42E-200,127 NXP Semiconductors, BYV42E-200,127 Datasheet - Page 4

• Manufacturer Part Number: BYV42E-200,127
• Description: DIODE RECT DL UF 200V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BYV42E-200,127

• Package / Case: TO-220AB-3
• Voltage - Forward (vf) (max) @ If: 1.2V @ 30A
• Current - Reverse Leakage @ Vr: 100µA @ 200V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 28ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.2 V
• Recovery Time: 28 ns
• Forward Continuous Current: 30 A
• Max Surge Current: 160 A
• Reverse Current Ir: 100 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3439-5; 934013490127; BYV42E-200

Philips Semiconductors
July 1998
Rectifier diodes
ultrafast, rugged
Fig.9. Typical and maximum forward characteristic
1000
0.01
50
40
30
20
10
Fig.8. Maximum I
Fig.7. Maximum t
100
0.1
0
10
10
1
1
0
1
IF / A
1
trr / ns
Irrm / A
Tj = 150 C
Tj = 25 C
I
F
= f(V
0.5
F
rrm
); parameter T
rr
-dIF/dt (A/us)
dIF/dt (A/us)
typ
at T
at T
VF / V
IF=1A
10
10
j
j
= 25 ˚C; per diode
= 25 ˚C; per diode
IF=20A
IF=20A
1.0
max
j
IF=1A
100
1.5
100
4
Fig.11. Transient thermal impedance; per diode;
Fig.10. Maximum Q
0.001
100
1.0
0.01
10
0.1
10
1.0
1
1us
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
10us
BYV42E, BYV42EB series
100us
Z
pulse width, tp (s)
th j-mb
IF=20A
-dIF/dt (A/us)
10A
1ms
5A
2A
1A
s
at T
= f(t
10
P
D
10ms 100ms
j
p
= 25 ˚C; per diode
).
t
p
Product specification
T
D =
BYV42E
T
t
p
t
1s
Rev 1.200
100
10s