U30FWJ2C48M(T24L,Q Toshiba, U30FWJ2C48M(T24L,Q Datasheet - Page 3

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U30FWJ2C48M(T24L,Q

Manufacturer Part Number
U30FWJ2C48M(T24L,Q
Description
DIODE SCHOTTKY 30V 30A 12-10D2A
Manufacturer
Toshiba
Datasheet

Specifications of U30FWJ2C48M(T24L,Q

Voltage - Forward (vf) (max) @ If
470mV @ 15A
Current - Reverse Leakage @ Vr
15mA @ 30V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
30V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
TO-220SM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Handling Precaution
Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we recommend
when you design a circuit with a device.
Please refer to the Rectifiers databook for further information.
V
I
I
T
O
FSM
j
RRM
:
:
:
:
Use this rating with reference to the above. V
this temperature coefficient into account designing a device at low temperature.
We recommend that the worst case current be no greater than 80% of the absolute maximum rating
of I
allowable Tamax-I
This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation,
which seldom occurs during the lifespan of the device.
Derate this rating when using a device in order to ensure high reliability. We recommend that the
device be used at a T
O
and T
j
be below 100°C. When using this device, take the margin into consideration by using an
O
curve.
j
of below 100°C.
3
RRM
has a temperature coefficient of 0.1%/°C. Take
30FWJ2C48M,U30FWJ2C48M
2006-11-10

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