BAS 16S E6327 Infineon Technologies, BAS 16S E6327 Datasheet - Page 5
![DIODE SW GP 80V 200MA SOT-363](/photos/5/30/53072/448-sot-363_sml.jpg)
BAS 16S E6327
Manufacturer Part Number
BAS 16S E6327
Description
DIODE SW GP 80V 200MA SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BAS_16S_E6327.pdf
(21 pages)
Specifications of BAS 16S E6327
Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.2 A
Max Surge Current
4.5 A
Configuration
Triple Parallel
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16SE6327XT
SP000010200
SP000010200
Reverse current I
V
Forward current I
T
Ι
A
F
R
= 25°C
= Parameter
150
100
mA
10
nA
10
10
10
10
50
0
5
4
3
2
1
0
0
BAS 16
25
0.5
50
R
F
= ƒ (T
= ƒ (V
75
typ
A
F
)
)
100
1.0
max
70 V
25 V
°C
EHB00023
V
V
T
F
A
150
1.5
5
Forward Voltage V
I
Forward current I
BAS16
V
F
F
= Parameter
mA
1.0
0.5
300
200
150
100
50
V
0
0
0
0
BAS 16
15
Ι
F
= 100 mA
30
0.1 mA
10 mA
1 mA
45
50
F
F
60
= ƒ (T
= ƒ (T
75
S
90 105 120 °C
A
)
)
100
2009-09-28
BAS16...
EHB00025
T
T
C
A
S
150
150