BAS 16S E6327 Infineon Technologies, BAS 16S E6327 Datasheet - Page 7
![DIODE SW GP 80V 200MA SOT-363](/photos/5/30/53072/448-sot-363_sml.jpg)
BAS 16S E6327
Manufacturer Part Number
BAS 16S E6327
Description
DIODE SW GP 80V 200MA SOT-363
Manufacturer
Infineon Technologies
Datasheet
1.BAS_16S_E6327.pdf
(21 pages)
Specifications of BAS 16S E6327
Package / Case
SC-70-6, SC-88, SOT-363
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
1µA @ 75V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
3 Independent
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
85 V
Forward Continuous Current
0.2 A
Max Surge Current
4.5 A
Configuration
Triple Parallel
Recovery Time
4 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS16SE6327XT
SP000010200
SP000010200
Forward current I
BAS16U
Permissible Puls Load R
BAS16
K/W
mA
10
10
10
10
10
250
200
175
150
125
100
75
50
25
-1
0
3
2
1
0
10
0
-7
15
10
30
-6
10
45
-5
F
60
= ƒ (T
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
-4
75
10
S
thJS
90 105 120 °C
)
-3
= ƒ (t
10
-2
p
)
T
t
s
p
S
150
10
0
7
Forward current I
BAS16W
Permissible Pulse Load
I
BAS16
Fmax
mA
300
200
150
100
10
10
10
50
/ I
0
2
1
0
10
0
FDC
-7
15
10
= ƒ (t
30
-6
10
45
p
)
-5
F
60
= ƒ (T
10
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-4
75
10
S
90 105 120 °C
)
-3
10
2009-09-28
-2
BAS16...
T
t
s
p
S
150
10
0