BYV32-200G ON Semiconductor, BYV32-200G Datasheet - Page 3

• Manufacturer Part Number: BYV32-200G
• Description: DIODE ULT FAST 200V 8A TO-220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of BYV32-200G

• Voltage - Forward (vf) (max) @ If: 1.15V @ 20A
• Current - Reverse Leakage @ Vr: 50µA @ 200V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
8.0
6.0
4.0
2.0
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
20
18
16
14
12
10
70
50
30
20
10
0
140
0.2
Figure 1. Typical Forward Voltage, Per Leg
Figure 4. Current Derating, Case, Per Leg
0.3
145
0.4
v
F,
150
INSTANTANEOUS VOLTAGE (VOLTS)
T
SQUARE WAVE
0.5
C
, CASE TEMPERATURE (°C)
155
0.6
T
J
= 175°C
dc
160
0.7
0.8
165
0.9
25°C
170
1.0
175
100°C
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1.1
180
1.2
3
0.08
0.04
0.02
100
800
400
200
1.0
0.1
8.0
4.0
2.0
0.8
0.4
0.2
8.0
6.0
4.0
2.0
10
80
40
20
20
18
16
14
12
10
0
0.2
0
0
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if V
rated V
Figure 5. Current Derating, Ambient, Per Leg
SQUARE WAVE
dc
SQUARE WAVE
Figure 3. Typical Reverse Current, Per Leg*
dc
0.3
20
R
Figure 2. Maximum Forward Voltage
.
25
0.4
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
40
0.5
T
V
A
R
50
, AMBIENT TEMPERATURE (°C)
60
, REVERSE VOLTAGE (VOLTS)
0.6
T
J
100°C
100°C
= 175°C
25°C
80
0.7 0.8
75
100
175°C
100
0.9
120
1.0
R
is sufficiently below
140
125
1.1
R
R
(NO HEATSINK)
qJA
qJA
160
25°C
1.2
= 16°C/W
= 60°C/W
150
180
1.3
1.4
200
175