BYV52PI-200RG STMicroelectronics, BYV52PI-200RG Datasheet

DIODE FAST REC 200V 30A HE TOP31

BYV52PI-200RG

Manufacturer Part Number
BYV52PI-200RG
Description
DIODE FAST REC 200V 30A HE TOP31
Manufacturer
STMicroelectronics
Datasheet

Specifications of BYV52PI-200RG

Voltage - Forward (vf) (max) @ If
850mV @ 20A
Current - Reverse Leakage @ Vr
25µA @ 200V
Current - Average Rectified (io) (per Diode)
30A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
50ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TOP-3 Insulated
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3807
497-3807-5
DESCRIPTION
FEATURES
ABSOLUTE MAXIMUM RATINGS
October 1999
Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, or TOP3I this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION TOP3I :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
Symbol
Symbol
I
F(RMS)
V
I
Tstg
I
F(AV)
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FSM
RRM
Tj
®
RMS forward current
Average forward current
Surge non repetitive forward current
Storage and junction temperature range
Repetitive peak reverse voltage
Ed : 2C
= 0.5
Parameter
SOT93
TOP3I
Parameter
Tc=110 C
Tc=90 C
tp=10ms
sinusoidal
BYV52-200
(Plastic)
SOT93
Per diode
Per diode
Per diode
Per diode
A1
A2
Value
200
- 40 to + 150
- 40 to + 150
BYV52PI-200
BYV52/PI
K
Value
500
50
30
30
isolated
(Plastic)
TOP3I
Unit
Unit
A
A
A
V
C
C
1/6

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BYV52PI-200RG Summary of contents

Page 1

... Symbol V Repetitive peak reverse voltage RRM October 1999 BYV52-200 Parameter SOT93 Tc=110 C TOP3I Tc=90 C tp=10ms sinusoidal Parameter BYV52/ isolated SOT93 TOP3I (Plastic) (Plastic) BYV52PI-200 Value 50 Per diode 30 Per diode 30 Per diode 500 Per diode - 150 - 150 Value 200 Unit Unit V 1/6 ...

Page 2

BYV52/PI THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Rth (c) Coupling When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) ...

Page 3

Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) 40 =0.2 35 =0.1 30 =0. F(av)( Fig.3 : Forward voltage drop versus forward current (maximum ...

Page 4

BYV52/PI Fig.7 : Average current temperature. (duty cycle : 0.5) (SOD93) I F(av)(A) 35 Rth(j-a)=Rth(j- =tp Rth(j-a)=15 5 Tamb 100 Fig.9 : Junction capacitance ...

Page 5

PACKAGE MECHANICAL DATA SOD93 Marking : Type number Cooling method : C Weight : 3.79 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N DIMENSIONS REF. Millimeters Min. Typ. Max. Min. Typ. Max. A 4.70 4.90 0.185 C ...

Page 6

... STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of STMicroelectronics. ...

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