BYV52PI-200RG STMicroelectronics, BYV52PI-200RG Datasheet - Page 3

• Manufacturer Part Number: BYV52PI-200RG
• Description: DIODE FAST REC 200V 30A HE TOP31
• Manufacturer: STMicroelectronics

Specifications of BYV52PI-200RG

• Voltage - Forward (vf) (max) @ If: 850mV @ 20A
• Current - Reverse Leakage @ Vr: 25µA @ 200V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TOP-3 Insulated
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3807; 497-3807-5

Fig.1 : Average forward power dissipation versus
average forward current.
40
35
30
25
20
15
10
Fig.3 : Forward voltage drop versus forward
current (maximum values).
Fig.5 : Non repetitive surge peak forward current
versus overload duration.
(SOD93)
300
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
5
0
50
0.001
0
0
P F(av)(W)
0.1
I M(A)
VFM(V)
IM
Tj=125 C
5
o
t
=0.5
=0.05
10
1
0.01
I F(av)(A)
=0.1
15
IFM(A)
t(s)
20
10
=0.2
0.1
25
=tp/T
=0.5
100
Tc=110 C
30
Tc=25 C
Tc=50 C
T
o
=1
tp
o
300
o
35
1
Fig.2 : Peak current versus form factor.
500
450
400
350
300
250
200
150
100
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
0.5
0.2
Fig.6 : Non repetitive surge peak forward current
versus overload duration.
(TOP3I)
250
200
150
100
1.0
0.1
50
50
0.001
1.0E-03
0
0
K
0
K =
I M(A)
I M(A)
= 0 . 1
IM
= 0 . 2
Zth(j-c) (tp. )
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Single pulse
= 0 . 5
P=20W
Rth(j-c)
P=10W
t
=0.5
1.0E-02
0.01
P=30W
tp(s)
t(s)
1.0E-01
0.1
=tp/T
=tp/T
BYV52/PI
T
Tc=25 C
Tc=50 C
Tc=90 C
tp
T
1.0E+00
tp
o
I
o
o
M
3/6
1
1