BYW51G-200-TR STMicroelectronics, BYW51G-200-TR Datasheet - Page 4

• Manufacturer Part Number: BYW51G-200-TR
• Description: DIODE FAST REC 10A 200V D2PAK
• Manufacturer: STMicroelectronics

Specifications of BYW51G-200-TR

• Voltage - Forward (vf) (max) @ If: 850mV @ 8A
• Current - Reverse Leakage @ Vr: 15µA @ 200V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 35ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.15 V at 16 A
• Recovery Time: 35 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 100 A
• Reverse Current Ir: 15 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BYW51/F/G/FP/R-200
4/9
Fig. 4-3: Non repetitive surge peak forward current
versus overload duration (TO-220FPAB).
80
70
60
50
40
30
20
10
Fig. 5-2: Relative variation of thermal impedance
junction
(ISOWATT220AB, TO-220FPAB).
1.0
0.1
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
100
1E-3
0
50
20
10
1E-2
IM(A)
K=[Zth(j-c)/Rth(j-c)]
1
C(pF)
Single pulse
I
M
= 0.5
= 0.2
= 0.1
=0.5
t
to
case
1E-2
1E-1
10
versus
VR(V)
t(s)
t(s)
1E-1
1E+0
pulse
=tp/T
100
duration
Tc=75°C
Tc=100°C
T
Tc=25°C
F=1MHz
Tj=25°C
tp
1E+0
1E+1
200
Fig. 5-1: Relative variation of thermal impedance
junction to case versus pulse duration (D
TO-220AB).
1.0
0.1
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
100.0
Fig. 8: Reverse recovery charges versus dI
(per diode).
500
200
100
10.0
50
20
10
1E-3
1.0
0.1
10
K=[Zth(j-c)/Rth(j-c)]
Qrr(nC)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Single pulse
= 0.5
= 0.2
= 0.1
IFM(A)
90% confidence
IF=IF(av)
Tj=125°C
20
1E-2
Tj=125°C
dIF/dt(A/µs)
50
VFM(V)
t(s)
100
Tj=25°C
1E-1
200
=tp/T
T
2
PAK,
tp
1E+0
F
500
/dt