BAT54SLT1G ON Semiconductor, BAT54SLT1G Datasheet

BAT54SLT1G

Manufacturer Part Number

BAT54SLT1G

Description

DIODE SCHOTTKY DUAL 30V SOT23

Manufacturer

ON Semiconductor

Datasheets

1.BAT54SLT1.pdf (4 pages)

2.BAT54SLT1G.pdf (3 pages)

Specifications of BAT54SLT1G

Voltage - Forward (vf) (max) @ If

800mV @ 100mA

Current - Reverse Leakage @ Vr

2µA @ 25V

Current - Average Rectified (io) (per Diode)

200mA (DC)

Voltage - Dc Reverse (vr) (max)

30V

Reverse Recovery Time (trr)

5ns

Diode Type

Schottky

Speed

Small Signal =< 200mA (Io), Any Speed

Diode Configuration

1 Pair Series Connection

Mounting Type

Surface Mount

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Product

Schottky Diodes

Peak Reverse Voltage

30 V

Forward Continuous Current

0.2 A

Max Surge Current

0.6 A

Configuration

Dual Series

Recovery Time

5 ns

Forward Voltage Drop

0.8 V @ 0.1 A

Maximum Reverse Leakage Current

2 uA @ 25 V

Operating Temperature Range

- 55 C to + 150 C

Mounting Style

SMD/SMT

Capacitance, Junction

7.6 pF

Current, Forward

200 mA

Package Type

SOT-23 (TO-236)

Power Dissipation

225 mW

Primary Type

Schottky Barrier

Speed, Switching

Fast

Temperature, Junction, Maximum

+125 °C

Temperature, Operating

-55 to +125 °C

Time, Recovery

5 ns

Voltage, Forward

0.52 V

Voltage, Reverse

30 V

Rectifier Type

Schottky Diode

Peak Rep Rev Volt

30V

Avg. Forward Curr (max)

0.2A

Rev Curr

2uA

Peak Non-repetitive Surge Current (max)

Forward Voltage

0.8V

Operating Temp Range

-55C to 150C

Rev Recov Time

5ns

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

BAT54SLT1GOSTR

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Part Number

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Price

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Current page: 1 of 4
Download datasheet (98Kb)

BAT54SLT1G

Dual Series Schottky

Barrier Diodes

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

August, 2010 − Rev. 13

MAXIMUM RATINGS

Non−Repetitive Peak Forward Current

Repetitive Peak Forward Current

66%

Reverse Voltage

Forward Power Dissipation

Forward Current (DC)

Junction Temperature

Storage Temperature Range

These Schottky barrier diodes are designed for high speed switching

Pulse Wave = 1 sec, Duty Cycle =

Compliant

Extremely Fast Switching Speed

Low Forward Voltage − 0.35 V (Typ) @ I

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

@ T

Derate above 25°C

= 25°C

< 10 msec

Rating

= 125°C unless otherwise noted)

Symbol

FSM

FRM

stg

= 10 mAdc

−55 to +150

−55 to 150

200 Max

Value

225

600

300

1.8

mW/°C

Unit

°C

†For information on tape and reel specifications,

BAT54SLT1G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*Date Code orientation and/or overbar may

DETECTOR AND SWITCHING

vary depending upon manufacturing location.

Device

(Note: Microdot may be in either location)

DUAL HOT−CARRIER

ORDERING INFORMATION

ANODE

LD3

http://onsemi.com

CATHODE/ANODE

(Pb−Free)

Package

SOT−23

CASE 318

STYLE 11

30 VOLT

SOT−23

DIODES

= Device Code

= Date Code*

= Pb−Free Package

Publication Order Number:

3000 / Tape & Reel

CATHODE

Shipping

MARKING

DIAGRAM

BAT54SLT1/D

LD3M G

†

Related parts for BAT54SLT1G

BAT54SLT1G Summary of contents

Page 1

... Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54SLT1G SOT−23 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage ( mA) R Total Capacitance ( 1.0 MHz) R Reverse Leakage ( Forward Voltage (I = 0.1 mAdc) F Forward Voltage (I = ...

Page 3

W + 100 mH F 0.1 mF DUT 50 W OUTPUT PULSE GENERATOR Notes 2.0 kW variable resistor adjusted for a Forward Current (I Notes: 2. Input pulse is adjusted so I Notes: ...

Page 4

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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