BAT54SLT1G ON Semiconductor, BAT54SLT1G Datasheet - Page 2

• Manufacturer Part Number: BAT54SLT1G
• Description: DIODE SCHOTTKY DUAL 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of BAT54SLT1G

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Series
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: - 55 C to + 150 C
• Mounting Style: SMD/SMT
• Capacitance, Junction: 7.6 pF
• Current, Forward: 200 mA
• Package Type: SOT-23 (TO-236)
• Power Dissipation: 225 mW
• Primary Type: Schottky Barrier
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +125 °C
• Time, Recovery: 5 ns
• Voltage, Forward: 0.52 V
• Voltage, Reverse: 30 V
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 30V
• Avg. Forward Curr (max): 0.2A
• Rev Curr: 2uA
• Peak Non-repetitive Surge Current (max): 1A
• Forward Voltage: 0.8V
• Operating Temp Range: -55C to 150C
• Rev Recov Time: 5ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAT54SLT1GOSTR

ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Total Capacitance
Reverse Leakage
Forward Voltage
Forward Voltage
Forward Voltage
Reverse Recovery Time
Forward Voltage
Forward Voltage
(I
(V
(V
(I
(I
(I
(I
(I
(I
R
F
F
F
F
F
F
R
R
= 0.1 mAdc)
= 30 mAdc)
= 100 mAdc)
= I
= 1.0 mAdc)
= 10 mAdc)
= 10 mA)
= 1.0 V, f = 1.0 MHz)
= 25 V)
R
= 10 mAdc, I
R(REC)
Characteristic
= 1.0 mAdc, Figure 1)
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
http://onsemi.com
2
Symbol
V
(BR)R
C
V
V
V
V
V
I
t
R
rr
T
F
F
F
F
F
Min
30
−
−
−
−
−
−
−
−
0.22
0.38
0.46
0.29
0.35
Typ
7.6
0.5
−
−
Max
0.24
0.32
0.40
2.0
0.5
0.8
5.0
10
−
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
ns
V