MBR2080CT ON Semiconductor, MBR2080CT Datasheet
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MBR2080CT
Specifications of MBR2080CT
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MBR2080CT Summary of contents
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... MBR2080CT, MBR2090CT, MBR20100CT SWITCHMODE™ Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • Total (10 A Per Diode Leg) • Guard−Ring for Stress Protection • ...
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... The heat generated must be less than the thermal conductivity from Junction−to−Ambient Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device MBR2080CT MBR2080CTG MBR2090CT MBR2090CTG MBR20100CT MBR20100CTG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. = 133° ...
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T = 25°C J 1.0 0.5 0 0.1 0.2 0.3 0.4 0.5 0 INSTANTANEOUS VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage Per Diode 20 RATED VOLTAGE APPLIED R = 2°C/W ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...