MBR2080CT ON Semiconductor, MBR2080CT Datasheet - Page 2
![DIODE SCHOTTKY 10A 80V TO-220AB](/photos/5/30/53087/488-to-220ab_sml.jpg)
MBR2080CT
Manufacturer Part Number
MBR2080CT
Description
DIODE SCHOTTKY 10A 80V TO-220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet
1.MBR2080CTG.pdf
(4 pages)
Specifications of MBR2080CT
Voltage - Forward (vf) (max) @ If
850mV @ 10A
Current - Reverse Leakage @ Vr
100µA @ 80V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
80V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Reverse Recovery Time (trr)
-
Other names
MBR2080CTOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MBR2080CT
Manufacturer:
PANJIT
Quantity:
15 000
Company:
Part Number:
MBR2080CT
Manufacturer:
ON
Quantity:
12 500
Part Number:
MBR2080CT
Manufacturer:
MCC/美微科
Quantity:
20 000
Company:
Part Number:
MBR2080CTG
Manufacturer:
ON
Quantity:
12 500
Part Number:
MBR2080CTG
Manufacturer:
ON/安森美
Quantity:
20 000
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Nonrepetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
Maximum Thermal Resistance Junction−to−Case
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
MBR2080CT
MBR2080CTG
MBR2090CT
MBR2090CTG
MBR20100CT
MBR20100CTG
Working Peak Reverse Voltage
DC Blocking Voltage
(Rated V
(Rated V
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
(i
(i
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
F
F
F
F
= 10 Amps, T
= 10 Amps, T
= 20 Amps, T
= 20 Amps, T
R
R
) T
, Square Wave, 20 kHz) T
C
= 133°C
C
C
C
C
= 125°C)
= 25°C)
= 125°C)
= 25°C)
C
C
(Per Diode Leg)
Device
= 125°C)
= 25°C)
Junction−to−Ambient
R
)
Rating
C
(Per Diode Leg)
= 133°C
http://onsemi.com
2
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−220
TO−220
TO−220
TO−220
TO−220
TO−220
Symbol
V
V
I
I
dv/dt
R
I
I
R
F(AV)
RRM
T
FRM
FSM
RWM
V
RRM
T
v
i
qJC
qJA
stg
R
R
F
J
2080CT
D
/dT
80
J
< 1/R
*65 to +175
*65 to +175
2090CT
10,000
qJA
50 Units / Rail
50 Units / Rail
50 Units / Rail
MBR
0.75
0.85
0.85
0.95
150
0.5
2.0
6.0
0.1
90
10
20
60
Shipping
.
20100CT
†
100
°C/W
V/ms
Unit
mA
°C
°C
V
A
A
A
A
V