RF071M2STR Rohm Semiconductor, RF071M2STR Datasheet - Page 2

DIODE 200V 700MA SOD123

RF071M2STR

Manufacturer Part Number
RF071M2STR
Description
DIODE 200V 700MA SOD123
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RF071M2STR

Voltage - Forward (vf) (max) @ If
850mV @ 700mA
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
700mA
Current - Reverse Leakage @ Vr
10µA @ 200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
25ns
Mounting Type
Surface Mount
Package / Case
SOD-123 Flat Leads
Fast Recovery 200v 7a
Diode Type
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
700mA
Forward Voltage Vf Max
850mV
Reverse Recovery Time Trr Max
25ns
Forward Surge Current Ifsm Max
15A
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
0.85 V
Recovery Time
25 ns
Forward Continuous Current
0.7 A
Max Surge Current
15 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RF071M2STR
Manufacturer:
Rohm Semiconductor
Quantity:
43 199
Part Number:
RF071M2STR
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Part Number:
RF071M2STR
Quantity:
2 051
Diodes
Electrical characteristic curves (Ta=25°C)
0.001
0.01
200
150
100
820
810
800
790
780
770
1000
0.1
50
100
0
1
10
1
0
1
100 200 300 400 500 600 700 800 900
Ta=75℃
FORWARD VOLTAGE:VF(mV)
Ta=125℃
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
Ta=150℃
VF DISPERSION MAP
IFSM DISRESION MAP
AVE:795.7mV
AVE:63.0A
TIME:t(ms)
10
Ifsm
Ifsm
8.3ms
Ta=25℃
n=30pcs
IF=0.7A
t
Ta=-25℃
Ta=25℃
1cyc
100
10000
1000
0.01
100
100
1000
0.1
10
100
90
80
70
60
50
40
30
20
10
30
25
20
15
10
1
0.1
0
10
5
0
1
0
0.001
Mounted on epoxy board
IM=10mA
0.01
1ms
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
50
300us
trr DISPERSION MAP
IR DISPERSION MAP
AVE:11.1nA
time
0.1
TIME:t(s)
AVE:12.2ns
Ta=150℃
IF=0.5A
100
1
Ta=75℃
10
VR=200V
Ta=25℃
Ta=25℃
n=30pcs
Ta=-25℃
150
Irr=0.25*IR
Ta=125℃
Ta=25℃
n=10pcs
IF=0.5A
IR=1A
Rth(j-c)
100
Rth(j-a)
200
1000
100
1000
100
90
80
70
60
50
40
30
20
10
100
10
0
10
1
0.8
0.6
0.4
0.2
1
0
1
0
1
0
IFSM-CYCLE CHARACTERISTICS
5
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
Sin(θ=180)
NUMBER OF CYCLES
Ct DISPERSION MAP
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
10
AVERAGE RECTIFIED
0.5
Rev.E
AVE:37.0pF
RF071M2S
15
Ifsm
10
D=1/2
20
8.3ms
f=1MHz
1
1cyc
f=1MHz
25
Ta=25℃
n=10pcs
f=1MHz
VR=0V
8.3ms
DC
2/3
30
100
1.5

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