STTH3R02RL STMicroelectronics, STTH3R02RL Datasheet - Page 3

• Manufacturer Part Number: STTH3R02RL
• Description: DIODE ULT FAST 200V 3A DO-201AD
• Manufacturer: STMicroelectronics

Specifications of STTH3R02RL

• Voltage - Forward (vf) (max) @ If: 1V @ 3A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 3µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.2 V at 9 A
• Recovery Time: 30 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 75 A
• Reverse Current Ir: 3 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5257-2

STTH3R02
Table 4.
Figure 1.
Figure 3.
Symbol
V
I
RM
t
t
FP
rr
fr
50
40
30
20
10
100
0
80
60
40
20
0.0
0
0.0
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
0.1
δ
Dynamic characteristics
peak current versus duty cycle
Forward voltage drop versus
forward current (maximum values)
P = 10 W
P = 10 W
0.2
0.5
0.3
P = 5 W
P = 5 W
Parameter
0.4
T
P = 3 W
P = 3 W
j
=150°C
0.5
1.0
0.6
T
0.7
j
=25°C
1.5
I
I
M
M
δ
d
=tp/T
=tp/T
0.8
T
T
V
0.9
FM
I
V
I
V
I
V
I
V
I
T
(V)
F
F
F
F
F
tp
tp
j
R
R
R
FR
= 1 A, dI
= 1 A, dI
= 3 A, dI
= 3 A, dI
= 3 A, dI
= 25° C
1.0
= 30 V, T
= 30 V, T
= 160 V, T
2.0
= 1.1 x V
Test conditions
F
F
F
F
F
Figure 2.
Figure 4.
/dt = -50 A/µs,
/dt = -100 A/µs,
/dt = -200 A/µs,
/dt = 100 A/µs
/dt = 100 A/µs,
j
j
= 25° C
= 25° C
Fmax
j
= 125° C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
50
40
30
20
10
1.E-01
0
, T
0.0
j
L
DO-201AD
leads
= 25° C
Single pulse
=10mm
Forward voltage drop versus
forward current (typical values)
Relative variation of thermal
impedance junction to ambient
versus pulse duration - DO-201AD
(Epoxy printed circuit board FR4,
e
CU
1.E+00
0.5
= 35 µm)
T
j
=150°C
1.E+01
Min.
1.0
T
j
=25°C
Typ
3.5
1.9
24
16
40
1.E+02
Characteristics
1.5
Max.
4.5
30
20
V
t
P
FM
(s)
(V)
1.E+03
2.0
Unit
ns
ns
A
V
3/9