STTH3R02RL STMicroelectronics, STTH3R02RL Datasheet - Page 4

• Manufacturer Part Number: STTH3R02RL
• Description: DIODE ULT FAST 200V 3A DO-201AD
• Manufacturer: STMicroelectronics

Specifications of STTH3R02RL

• Voltage - Forward (vf) (max) @ If: 1V @ 3A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 3µA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.2 V at 9 A
• Recovery Time: 30 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 75 A
• Reverse Current Ir: 3 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5257-2

Characteristics
4/9
Figure 5.
Figure 7.
Figure 9.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
60
50
40
30
20
10
10
0
1.E-01
1
10
1
L
leads
Single pulse
DO-15
=10mm
Relative variation of thermal
impedance junction to ambient
versus pulse duration - DO-15
(Epoxy printed circuit board FR4,
e
Junction capacitance versus
reverse applied voltage (typical
values)
Reverse recovery time versus dI
(typical values)
CU
1.E+00
= 35 µm)
10
1.E+01
100
T
T
j
=25°C
j
=125°C
100
1.E+02
V
dI
osc
F=1MHz
F
T
=30mV
/dt(A/µs)
j
=25°C
V
V
t
P
R
R
I
(s)
F
=160V
(V)
=3A
RMS
1.E+03
1000
1000
F
/dt
Figure 6.
Figure 8.
Figure 10. Peak reverse recovery current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
70
60
50
40
30
20
10
8
7
6
5
4
3
2
1
0
0
1.E-03
10
10
Single pulse
V
S
R
I
V
F
=160V
cu
SMC
=3A
R
I
=1cm²
F
=160V
=3A
1.E-02
Relative variation of thermal
impedance junction to ambient
versus pulse duration - SMC
(Epoxy printed circuit board FR4,
e
Reverse recovery charges versus
dI
versus dI
CU
F
/dt (typical values)
= 35 µm)
1.E-01
F
/dt (typical values)
1.E+00
100
T
100
j
=125°C
T
T
j
=125°C
j
=25°C
T
j
=25°C
1.E+01
t
P
(s)
1.E+02
dI
dI
F
/dt(A/µs)
F
/dt(A/µs)
STTH3R02
1.E+03
1000
1000