TMBYV10-40FILM STMicroelectronics, TMBYV10-40FILM Datasheet - Page 2
![DIODE SCHOTTKY 1A 40V MELF](/photos/5/36/53646/497-dl-41__do-213ab__melf__glass__series_sml.jpg)
TMBYV10-40FILM
Manufacturer Part Number
TMBYV10-40FILM
Description
DIODE SCHOTTKY 1A 40V MELF
Manufacturer
STMicroelectronics
Datasheet
1.TMBYV10-40FILM.pdf
(4 pages)
Specifications of TMBYV10-40FILM
Voltage - Forward (vf) (max) @ If
550mV @ 1A
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
500µA @ 40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-213AB, Melf
Product
Schottky Diodes
Peak Reverse Voltage
40 V
Forward Continuous Current
1 A
Max Surge Current
50 A
Configuration
Single
Forward Voltage Drop
0.85 V at 3 A
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 65 C to + 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-7668-2
TMBYV10-40FILM
TMBYV10-40FILM
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TMBYV10-40FILM
Manufacturer:
STM
Quantity:
1 700
Part Number:
TMBYV10-40FILM
Manufacturer:
ST
Quantity:
20 000
Fig. 1 : Forward current versus forward voltage
at low level (typical values).
TMBYV10-40
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
* * Pulse test: t
DYNAMIC CHARACTERISTICS
Forward current flow in a Schottky rectifier is due
to majority carrier conduction. So reverse recovery
is not affected by storage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
2/4
Symbol
Synbol
V
I
R
C
F
*
*
T
T
I
I
p
T
F
F
j
j
j
= 25 C
= 100 C
= 1A
= 3A
= 25 C
300 s
2%.
Test Conditions
Test Conditions
V
T
j
R
= 25 C
= V
V
R
RRM
= 0
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in par-
allel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
Fig. 2 : Forward current versus forward voltage
at high level (typical values).
Min.
Min.
Typ.
Typ.
220
Max.
Max.
0.55
0.85
0.5
10
Unit
Unit
mA
pF
V