TMBYV10-60 STMicroelectronics, TMBYV10-60 Datasheet
TMBYV10-60
Available stocks
Related parts for TMBYV10-60
TMBYV10-60 Summary of contents
Page 1
DESCRIPTION Metal to silicon rectifier diode in glass case featu- ring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high fre- quency circuits. ABSOLUTE MAXIMUM RATINGS (limiting ...
Page 2
TMBYV 10-60 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol 100 Pulse test: t 300 s 2%. p DYNAMIC ...
Page 3
Figure 1. Forward current versus forward voltage at low level (typical values). Figure 3. Reverse current versus junction temperature. Figure 2. Forward current versus forward voltage at high level (typical values). Figure 4. Reverse current versus V cent. TMBYV 10-60 ...
Page 4
TMBYV 10-60 Figure 5. Capacitance C versus reverse applied voltage V (typical values) R Figure 7. Surge non repetitive forward current versus number of cycles. 4/5 Figure 6. Surge non repetitive forward current for a rectangular pulse with t 10 ...
Page 5
... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. ...