TMBYV10-60FILM STMicroelectronics, TMBYV10-60FILM Datasheet - Page 2

• Manufacturer Part Number: TMBYV10-60FILM
• Description: DIODE SCHOTTKY 1A 60V MELF
• Manufacturer: STMicroelectronics

Specifications of TMBYV10-60FILM

• Voltage - Forward (vf) (max) @ If: 700mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, Melf
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 40 A
• Configuration: Single
• Forward Voltage Drop: 0.7 V
• Maximum Reverse Leakage Current: 500 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-6601-2; TMBYV10-60FILM

TMBYV 10-60
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
* Pulse test: t
DYNAMIC CHARACTERISTICS
Forward current flow in a Schottky rectifier is due
to majority carrier conduction. So reverse recovery
is not affected by storage charge as in conventional
PN junction diodes.
Nevertheless, when the device switches from for-
ward biased condition to reverse blocking state,
current is required to charge the depletion capaci-
tance of the diode.
2/5
Symbol
Symbol
V
I
C
R
F
*
*
p
300 s
T
T
I
I
T
T
F
F
j
j
j
j
= 1A
= 3A
= 25 C
= 100 C
= 25 C
= 25 C
2%.
Test Conditions
Test Conditions
V
T
V
V
j
R
R
R
= 25 C
= V
= 0
= 5V
RRM
This current depends only of diode capacitance and
external circuit impedance. Satisfactory circuit be-
haviour analysis may be performed assuming that
Schottky rectifier consists of an ideal diode in par-
allel with a variable capacitance equal to the junc-
tion capacitance (see fig. 5 page 4/4).
Min.
Min.
Typ.
Typ.
150
40
Max.
Max.
0.5
0.7
10
1
Unit
Unit
mA
pF
V