1N5820 STMicroelectronics, 1N5820 Datasheet - Page 2

• Manufacturer Part Number: 1N5820
• Description: DIODE SCHOTTKY 20V 3A DO201AD
• Manufacturer: STMicroelectronics

Specifications of 1N5820

• Voltage - Forward (vf) (max) @ If: 475mV @ 3A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 2mA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: 1N5820ST; 1N5820ST; 497-6642-2; 497-6642-2; 497-6642-3

1N582x
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS
Pulse test : * tp = 380 µs, < 2%
To evaluate the conduction losses use the following equations :
P = 0.33 x I
P = 0.33 x I
Fig. 1: Average forward power dissipation versus
average forward current (1N5820/1N5821).
Fig. 3: Normalized avalanche power derating
versus pulse duration.
0.001
2/5
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
Symbol
Symbol
0.1
R
R
0.0
0.01
1
th (j-a)
V
PF(av)(W)
th (j-l)
I
P
R
P
F
ARM
ARM p
*
*
0.5
(1µs)
(t )
F(AV)
F(AV)
0.1
Junction to ambient
Junction to lead
Reverse leakage
current
Forward voltage drop
= 0.05
1.0
+ 0.060 I
+ 0.035 I
Parameter
1.5
1
= 0.1
t (µs)
IF(av) (A)
p
2.0
F
F
2
2
(RMS )
(RMS )
= 0.2
10
2.5
Parameter
for 1N5822
for 1N5820 / 1N5821
3.0
Tj = 25 C
Tj = 100 C
Tj = 25 C
Tj = 25 C
= 0.5
100
=tp/T
Tests Conditions
3.5
T
Lead length = 10 mm
Lead length = 10 mm
= 1
tp
1000
4.0
V
I
I
F
F
R
= 3 A
= 9.4 A
Fig. 2: Average forward power dissipation versus
average forward current (1N5822).
Fig. 4: Normalized avalanche power derating
versus junction temperature.
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
0.8
0.6
0.4
0.2
= V
1
0
0.0
0
P
PF(av)(W)
RRM
P
ARM
ARM p
(25°C)
0.5
(t )
25
1N5820 1N5821 1N5822
= 0.05
0.475
0.85
20
1.0
2
50
1.5
Value
T (°C)
IF(av) (A)
0.5
0.9
j
= 0.1
80
25
20
75
2
2.0
= 0.2
100
0.525
0.95
20
2.5
2
=tp/T
125
3.0
Unit
Unit
= 0.5
T
C/W
C/W
mA
mA
V
V
= 1
tp
150
3.5