1N5820 STMicroelectronics, 1N5820 Datasheet - Page 3

• Manufacturer Part Number: 1N5820
• Description: DIODE SCHOTTKY 20V 3A DO201AD
• Manufacturer: STMicroelectronics

Specifications of 1N5820

• Voltage - Forward (vf) (max) @ If: 475mV @ 3A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 2mA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: 1N5820ST; 1N5820ST; 497-6642-2; 497-6642-2; 497-6642-3

Fig. 5-1: Average forward current versus ambient
temperature ( =0.5) (1N5820/1N5821).
Fig. 6-1:
current versus overload duration (maximum
values) (1N5820/1N5821).
Fig. 7: Relative variation of thermal impedance
junction to ambient versus pulse duration (epoxy
printed circuit board, e(Cu)=35mm, recommended
pad layout).
IF(av)(A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
14
12
10
1.0
0.8
0.6
0.4
0.2
0.0
1E-3
8
6
4
2
0
1E-1
0
IM(A)
Zth(j-a)/Rth(j-a)
Single pulse
I
= 0.5
M
= 0.2
= 0.1
=tp/T
=0.5
t
25
T
1E+0
Non repetitive surge peak forward
tp
1E-2
Rth(j-a)=80°C/W
50
Rth(j-a)=Rth(j-l)=25°C/W
Tamb(°C)
1E+1
t(s)
75
tp(s)
1E-1
100
1E+2
=tp/T
125
Ta=25°C
Ta=100°C
T
Ta=75°C
tp
1E+0
1E+3
150
Fig. 5-2: Average forward current versus ambient
temperature ( =0.5) (1N5822).
Fig. 6-2:
current versus overload duration (maximum
values) (1N5822).
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
11
10
600
100
1E-3
9
8
7
6
5
4
3
2
1
0
10
0
IM(A)
IF(av)(A)
1
C(pF)
I
M
=tp/T
=0.5
t
25
T
2
Rth(j-a)=80°C/W
Non repetitive surge peak forward
tp
Rth(j-a)=Rth(j-l)=25°C/W
1E-2
50
Tamb(°C)
5
t(s)
1N5822
75
VR(V)
1N5820
1E-1
10
100
125
20
1N582x
Ta=100°C
1N5821
F=1MHz
Ta=25°C
Tj=25°C
Ta=75°C
1E+0
150
3/5
40