STTH806DTI STMicroelectronics, STTH806DTI Datasheet - Page 2

• Manufacturer Part Number: STTH806DTI
• Description: DIODE BOOST 600V 8A TO-220AC
• Manufacturer: STMicroelectronics

Specifications of STTH806DTI

• Voltage - Forward (vf) (max) @ If: 3.6V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Insulated, TO-220AC
• Package Capacitance: C = 7 pF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-3250-5

Characteristics
1
Table 4.
Table 5.
1. Pulse test: tp = 100 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Table 6.
Table 7.
2/7
Symbol
Symbol
Symbol
Symbol
R
V
I
I
Q
RM
V
th(j-c)
R
t
S
F
rr
t
rr
FP
fr
(1)
(2)
Reverse recovery time
Reverse recovery current
Reverse recovery softness factor
Reverse recovery charges
Junction to case thermal resistance
Reverse leakage current
Forward voltage drop
Forward recovery time
Forward recovery voltage
Static electrical characteristics
Characteristics
Thermal parameter
To evaluate the conduction losses use the following equation:
P = 1.7 x I
Dynamic characteristics
Turn-on switching characteristics
Parameter
Parameter
Parameter
F(AV)
+ 0.087 I
T
T
F
Parameter
j
j
2
= 25° C
= 25° C
(RMS)
T
T
j
j
= 125° C
T
T
T
T
= 25° C
j
j
j
j
= 25° C
= 125° C
= 25° C
= 150° C
I
V
I
F
F
Test conditions
FR
= 8 A, dI
= 8 A, dI
Test conditions
= 1.1 x V
I
I
V
I
VdI
F
F
F
Test conditions
R
= 0.5 A, I
= 1 A, dI
= 8 A, V
F
= 30 V
/dt = - 200 A/µs
F
F
V
I
F
/dt = 100 A/µs
/dt = 100 A/µs
R
F
= 8 A
= V
max
R
F
rr
/dt = - 50 A/µs
= 400,
RRM
= 0.25 A, I
R
Min.
= 1 A
Min.
Value
1.95
Typ
Min Typ Max Unit
2.6
15
Typ
0.4
13
50
4
Max.
STTH806DTI
100
Max.
3.6
2.4
10
200
7
5.5
30
°C/W
Unit
Unit
Unit
µA
ns
V
V
ns
A