STTH806DTI STMicroelectronics, STTH806DTI Datasheet - Page 3

• Manufacturer Part Number: STTH806DTI
• Description: DIODE BOOST 600V 8A TO-220AC
• Manufacturer: STMicroelectronics

Specifications of STTH806DTI

• Voltage - Forward (vf) (max) @ If: 3.6V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Insulated, TO-220AC
• Package Capacitance: C = 7 pF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: 497-3250-5

STTH806DTI
Figure 1.
Figure 3.
Figure 5.
30
25
20
15
10
60
50
40
30
20
10
1.0
0.8
0.6
0.4
0.2
0.0
5
0
0
0
0
1E-3
t (ns)
P(W)
rr
Z
δ = 0.2
δ = 0.1
th(j-c)
δ = 0.5
Single pulse
50
1
/R
th(j-c)
100
δ = 0.05
Conduction losses versus average
current
Relative variation of thermal
impedance junction to case
versus pulse duration
Reverse recovery time versus dI
(typical values)
2
I =2 x I
150
F
3
1E-2
δ = 0.1
F(AV)
200
dI /dt(A/µs)
4
F
I
F(AV)
δ = 0.2
t (s)
I =I
p
250
F
5
F(AV)
(A)
300
6
1E-1
I =0.5 x I
δ = 0.5
F
350
7
F(AV)
δ
400
δ
=tp/T
=tp/T
8
V =400V
T =125°C
T
450
R
j
T
9
δ = 1
tp
tp
1E+0
500
F
10
/dt
Figure 2.
Figure 4.
Figure 6.
100
9
8
7
6
5
4
3
2
1
0
140
120
100
10
80
60
40
20
0
0
1
I
RM
0
Q (nC)
0
I
V =400V
T =125°C
V =400V
T =125°C
FM
rr
j
R
R
j
(A)
50
(A)
(typical values)
T =125°C
j
1
100
Forward voltage drop versus
forward current
Peak reverse recovery current
versus dI
Reverse charges versus dI
(typical values)
100
(maximum values)
I =0.5 x I
F
150
2
T =125°C
j
F(AV)
200
200
3
dI /dt(A/µs)
F
I =I
F
dI /dt(A/µs)
/dt (typical values)
F
F(AV)
F
V
250
FM
4
(V)
(maximum values)
I =2 x I
F
300
300
T =25°C
j
F(AV)
5
350
Characteristics
6
400
400
F
I =0.5 x I
F
I =2 x I
F
/dt
450
7
I =I
F
F(AV)
F(AV)
F(AV)
500
500
8
3/7