MBRS2H100T3G ON Semiconductor, MBRS2H100T3G Datasheet - Page 4

• Manufacturer Part Number: MBRS2H100T3G
• Description: DIODE SCHOTTKY 2A 100V SMB
• Manufacturer: ON Semiconductor

Specifications of MBRS2H100T3G

• Voltage - Forward (vf) (max) @ If: 790mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 8µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 2 A
• Max Surge Current: 130 A
• Configuration: Single
• Forward Voltage Drop: 0.79 V
• Maximum Reverse Leakage Current: 8 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRS2H100T3G; MBRS2H100T3GOSTR

450
400
350
300
250
200
150
100
4.0
3.0
2.0
1.0
0.001
50
0.01
100
0
0
1.0
0.1
10
0
0
Square Wave
0.000001
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
20%
10%
SINGLE PULSE
10
20
dc
Figure 7. Current Derating, Ambient
dc
20
T
Figure 5. Typical Capacitance
40
A
, AMBIENT TEMPERATURE (°C)
0.00001
Figure 9. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRS2H100
V
R
30
, REVERSE VOLTAGE (V)
60
40
80
0.0001
50
100
60
120
70
R
R
TYPICAL CHARACTERISTICS
qJA
qJA
0.001
T
f = 1 MHz
140
J
80
= 71°C/W
= 100°C/W
= 25°C
http://onsemi.com
90
160
100
175
0.01
PULSE TIME (s)
4
4.0
3.0
2.0
1.0
0
5
4
3
2
1
0
100
0
Figure 8. Maximum Forward Power Dissipation
0.1
Square Wave
T
110
J
I
= 175°C
Figure 6. Current Derating − Lead
O
dc
, AVERAGE FORWARD CURRENT (A)
SMB Die X 1.8 mm Die Y 1.8 mm
PCB Cu Area 645.2 mm
1
T
120
L
, LEAD TEMPERATURE (°C)
1.0
130
2
10
140
3
2
PCB Cu thk 1.0 oz
150
Square Wave
R
qJL
100
160
= 14°C/W
4
dc
170
1000
5