MBRS2H100T3G ON Semiconductor, MBRS2H100T3G Datasheet - Page 5

• Manufacturer Part Number: MBRS2H100T3G
• Description: DIODE SCHOTTKY 2A 100V SMB
• Manufacturer: ON Semiconductor

Specifications of MBRS2H100T3G

• Voltage - Forward (vf) (max) @ If: 790mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 8µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 2 A
• Max Surge Current: 130 A
• Configuration: Single
• Forward Voltage Drop: 0.79 V
• Maximum Reverse Leakage Current: 8 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRS2H100T3G; MBRS2H100T3GOSTR

0.001
1000
1000
0.01
0.01
0.01
100
100
100
1.0
0.1
1.0
0.1
1.0
0.1
10
10
10
0.000001
0.000001
0.000001
50% (DUTY CYCLE)
5.0%
50% (DUTY CYCLE)
20%
10%
2.0%
5.0%
2.0%
1.0%
50% (DUTY CYCLE)
10%
5.0%
2.0%
1.0%
20%
1.0%
20%
10%
SINGLE PULSE
SINGLE PULSE
SINGLE PULSE
0.00001
Figure 11. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRA2H100
0.00001
0.00001
Figure 10. Thermal Response, Junction−to−Ambient (min pad) − MBRS2H100
Figure 12. Thermal Response, Junction−to−Ambient (min pad) − MBRA2H100
0.0001
0.0001
0.0001
TYPICAL CHARACTERISTICS
0.001
0.001
0.001
http://onsemi.com
0.01
0.01
0.01
PULSE TIME (s)
PULSE TIME (s)
PULSE TIME (s)
5
0.1
0.1
0.1
SMB Die X 1.8 mm Die Y 1.8 mm
PCB Cu Area 11.8 mm
1.0
1.0
1.0
10
10
10
2
PCB Cu thk 1.0 oz
100
100
100
1000
1000
1000