MBR1035G ON Semiconductor, MBR1035G Datasheet - Page 2

• Manufacturer Part Number: MBR1035G
• Description: DIODE SCHOTTKY 35V 10A TO220AC
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR1035G

• Voltage - Forward (vf) (max) @ If: 840mV @ 20A
• Voltage - Dc Reverse (vr) (max): 35V
• Current - Average Rectified (io): 10A
• Current - Reverse Leakage @ Vr: 100µA @ 35V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Product: Schottky Diodes
• Peak Reverse Voltage: 35 V
• Forward Continuous Current: 10 A
• Max Surge Current: 150 A
• Configuration: Single
• Forward Voltage Drop: 0.84 V @ 20 A
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Current, Forward: 10 A
• Current, Reverse: 5.3 mA
• Current, Surge: 150 A
• Package Type: TO-220AC
• Primary Type: Schottky Barrier
• Resistance, Thermal, Junction To Case: 2 °C/W
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -65 to +175 °C
• Voltage, Forward: 0.55 V
• Voltage, Reverse: 35 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBR1035GOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current,
Non−Repetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Instantaneous Forward Voltage (Note 2)
Instantaneous Reverse Current (Note 2)
(T
(Square Wave, 20 kHz, T
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
(Rated V
(i
(i
(i
(Rated dc Voltage, Tj = 125°C)
(Rated dc Voltage, Tj = 25°C)
F
F
F
C
= 10 Amps, T
= 20 Amps, Tj = 125°C)
= 20 Amps, Tj = 25°C)
= 135°C, Per Device)
R
)
j
= 125°C)
Characteristic
Characteristic
C
= 135°C)
MBR1035
MBR1045
Rating
2
Min. Pad
Min. Pad
Symbol
v
i
Conditions
R
F
Min
−
−
−
−
−
D
/dT
Symbol
Symbol
Typical
J
V
V
0.008
I
I
dv/dt
R
R
I
I
0.55
0.67
0.78
F(AV)
FRM
RRM
T
RWM
FSM
< 1/R
5.3
RRM
V
T
qJC
qJA
stg
R
J
qJA
.
−65 to +175
−65 to +175
10,000
Value
Max
Max
0.57
0.72
0.84
150
1.0
2.0
0.1
35
45
10
10
60
15
°C/W
Unit
V/ms
Unit
Unit
mA
°C
°C
V
A
A
A
A
V