MBR1035G ON Semiconductor, MBR1035G Datasheet - Page 3

• Manufacturer Part Number: MBR1035G
• Description: DIODE SCHOTTKY 35V 10A TO220AC
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR1035G

• Voltage - Forward (vf) (max) @ If: 840mV @ 20A
• Voltage - Dc Reverse (vr) (max): 35V
• Current - Average Rectified (io): 10A
• Current - Reverse Leakage @ Vr: 100µA @ 35V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Product: Schottky Diodes
• Peak Reverse Voltage: 35 V
• Forward Continuous Current: 10 A
• Max Surge Current: 150 A
• Configuration: Single
• Forward Voltage Drop: 0.84 V @ 20 A
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Current, Forward: 10 A
• Current, Reverse: 5.3 mA
• Current, Surge: 150 A
• Package Type: TO-220AC
• Primary Type: Schottky Barrier
• Resistance, Thermal, Junction To Case: 2 °C/W
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -65 to +175 °C
• Voltage, Forward: 0.55 V
• Voltage, Reverse: 35 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBR1035GOS

Q
H
L
1
B
G
4
3
D
A
K
F
U
T
PACKAGE DIMENSIONS
J
R
CASE 221B−04
C
ISSUE E
TO−220
S
6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
Y14.5M, 1982.
DIM
A
B
C
D
F
G
H
K
L
Q
R
S
T
U
J
0.595
0.380
0.160
0.025
0.142
0.190
0.110
0.014
0.500
0.045
0.100
0.080
0.045
0.235
0.000
MIN
INCHES
0.620
0.405
0.190
0.035
0.161
0.210
0.130
0.025
0.562
0.060
0.120
0.055
0.255
0.050
0.110
MAX
12.70
0.000
15.11
MILLIMETERS
MIN
9.65
4.06
0.64
3.61
4.83
2.79
0.36
1.14
2.54
2.04
1.14
5.97
15.75
10.29
14.27
MAX
4.82
0.89
4.09
5.33
3.30
0.64
1.52
3.04
2.79
1.39
6.48
1.27