EGF1B-E3/67A Vishay, EGF1B-E3/67A Datasheet - Page 3

• Manufacturer Part Number: EGF1B-E3/67A
• Description: DIODE 1A 100V 50NS DO-214BA
• Manufacturer: Vishay

Specifications of EGF1B-E3/67A

• Voltage - Forward (vf) (max) @ If: 1V @ 1A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Surface Mount
• Package / Case: DO-214BA
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1 V
• Recovery Time: 50 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88579
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
0.01
0.01
100
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
1
1
Fig. 4 - Typical Reverse Leakage Characteristics
0.2
0.030 (0.76)
0.060 (1.52)
0
0.118 (3.00)
0.100 (2.54)
0.066 (1.68)
0.040 (1.02)
Percent of Rated Peak Reverse Voltage (%)
0.4
Instantaneous Forward Voltage (V)
20
T
J
0.6
= 150 °C
T
0.8
T
DO-214BA (GF1)
J
J
40
= 150 °C
= 25 °C
[e-mail], [e-mail],
T
For technical questions within your region, please contact one of the following:
1.0
J
Cathode Band
0.187 (4.75)
0.167 (4.24)
0.226 (5.74)
0.196 (4.98)
T
= 100 °C
J
Pulse Width = 300 µs
1 % Duty Cycle
= 25 °C
0.006 (0.152) TYP.
0.0065 (0.17)
0.015 (0.38)
60
1.2
1.4
80
This datasheet is subject to change without notice.
1.6
100
1.8
0.114 (2.90)
0.094 (2.39)
0.108 (2.74)
0.098 (2.49)
100
0.1
70
60
50
40
30
20
10
10
0
1
0.01
0.1
[e-mail]
0.066 (1.68)
Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
0.060 (1.52)
MIN.
Fig. 5 - Typical Junction Capacitance
MIN.
0.1
Reverse Voltage (V)
t - Pulse Duration (s)
Mounting Pad Layout
1
EGF1A thru EGF1D
1
0.220 (5.58)
REF.
www.vishay.com/doc?91000
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mV
0.076 (1.93)
MAX.
www.vishay.com
p-p
100
100
3