EGF1T-E3/67A Vishay, EGF1T-E3/67A Datasheet - Page 3

DIODE 1A 1300V 75NS DO-214BA

EGF1T-E3/67A

Manufacturer Part Number
EGF1T-E3/67A
Description
DIODE 1A 1300V 75NS DO-214BA
Manufacturer
Vishay
Datasheet

Specifications of EGF1T-E3/67A

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
3V @ 1A
Voltage - Dc Reverse (vr) (max)
1300V (1.3kV)
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 1300V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Surface Mount
Package / Case
DO-214BA
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1300 V
Forward Voltage Drop
3 V
Recovery Time
75 ns
Forward Continuous Current
1 A
Max Surge Current
20 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Repetitive Reverse Voltage Vrrm Max
1.3kV
Forward Current If(av)
1A
Forward Voltage Vf Max
3.0V
Reverse Recovery Time Trr Max
75ns
Forward Surge Current Ifsm Max
20A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EGF1T-E3/67A
Manufacturer:
Vishay Semiconductors
Quantity:
13 005
Part Number:
EGF1T-E3/67A
Manufacturer:
VISHAY
Quantity:
180
Company:
Part Number:
EGF1T-E3/67A
Quantity:
3 000
Company:
Part Number:
EGF1T-E3/67A
Quantity:
70 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88904
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
0.01
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
Fig. 4 - Typical Reverse Leakage Characteristics
10
0.030 (0.76)
0.060 (1.52)
0
0.118 (3.00)
0.100 (2.54)
0.066 (1.68)
0.040 (1.02)
T
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
J
Percent of Rated Peak Reverse Voltage (%)
20
= 125 °C
Instantaneous Forward Voltage (V)
T
J
30
T
= 150 °C
J
= 150 °C
T
40
J
= 125 °C
DO-214BA (GF1)
T
J
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
= 25 °C
50
For technical questions within your region, please contact one of the following:
Cathode Band
0.187 (4.75)
0.167 (4.24)
0.226 (5.74)
0.196 (4.98)
T
J
= 25 °C
60
0.006 (0.152) TYP.
0.0065 (0.17)
0.015 (0.38)
70
80
This datasheet is subject to change without notice.
90
100
0.114 (2.90)
0.094 (2.39)
New Product
0.108 (2.74)
0.098 (2.49)
100
100
10
10
1
1
0.1
0.1
DiodesEurope@vishay.com
Fig. 5 - Typical Junction Capacitance Per Leg
0.066 (1.68)
Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
0.060 (1.52)
MIN.
MIN.
t - Pulse Duration (s)
Mounting Pad Layout
Reverse Voltage (V)
1
1
0.220 (5.58)
REF.
www.vishay.com/doc?91000
10
10
0.076 (1.93)
MAX.
www.vishay.com
EGF1T
100
100
3

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