SB3H100-E3/73 Vishay, SB3H100-E3/73 Datasheet - Page 3

• Manufacturer Part Number: SB3H100-E3/73
• Description: DIODE SCHOTTKY 3A 100V DO-201AD
• Manufacturer: Vishay

Specifications of SB3H100-E3/73

• Voltage - Forward (vf) (max) @ If: 800mV @ 3A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 20µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 3 A
• Max Surge Current: 100 A
• Configuration: Single
• Forward Voltage Drop: 0.8 V
• Maximum Reverse Leakage Current: 20 uA
• Operating Temperature Range: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88720
Revision: 04-Aug-09
1000
0.01
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
20
0
T
T
J
J
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
= 125 °C
= 150 °C
T
0.2
J
Instantaneous Forward Voltage (V)
= 150 °C
40
T
J
0.4
T
= 125 °C
J
= 175 °C
[e-mail], [e-mail],
For technical questions within your region, please contact one of the following:
0.6
60
T
T
J
J
Pulse Width = 300 μs
= 100 °C
= 25 °C
T
1 % Duty Cycle
0.8
J
= 100 °C
T
J
= 25 °C
80
1.0
100
1.2
0.210 (5.3)
0.190 (4.8)
0.052 (1.32)
0.048 (1.22)
DIA.
DIA.
DO-201AD
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
1000
100
100
MIN.
MIN.
0.1
10
10
1
0.1
0
[e-mail]
Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
SB3H90, SB3H100
1
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mV
www.vishay.com
p-p
100
100
3