SB3H100 Vishay Semiconductors, SB3H100 Datasheet

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SB3H100

Manufacturer Part Number
SB3H100
Description
Manufacturer
Vishay Semiconductors
Datasheet

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Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Document Number: 88720
Revision: 20-Aug-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
Critical rate of rise of reverse voltage
Storage temperature range
Maximum operating junction temperature
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Maximum instantaneous forward
voltage at:
Maximum DC reverse current at
rated DC blocking voltage
(1)
T
V
I
J
I
F(AV)
FSM
RRM
V
max.
I
R
F
High Barrier Technology for Improved High Temperature Performance
DO-201AD
A
High-Voltage Schottky Rectifier
I
I
= 25 °C unless otherwise noted)
F
F
= 3.0 A,
= 3.0 A,
TEST CONDITIONS
p
= 2.0 µs, 1 kHz
90 V, 100 V
175 °C
0.65 V
100 A
20 µA
3.0 A
L
= 90 °C
T
T
T
T
J
J
J
J
= 25 °C
= 125 °C
= 25 °C
= 125 °C
A
= 25 °C unless otherwise noted)
SYMBOL
SYMBOL
V
V
I
T
I
dv/dt
I
V
F(AV)
RRM
RWM
FSM
RRM
FEATURES
TYPICAL APPLICATIONS
For
inverters, free-wheeling, dc-to-dc converters, and
polarity protection applications.
MECHANICAL DATA
Case: DO-201AD
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
STG
T
V
I
DC
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
R
J
F
and WEEE 2002/96/EC
use
Vishay General Semiconductor
in
SB3H90
SB3H90
90
90
90
middle
- 55 to + 175
SB3H90 & SB3H100
10000
0.80
0.65
100
175
3.0
1.0
4.0
20
voltage
SB3H100
SB3H100
100
100
100
high
www.vishay.com
frequency
UNIT
UNIT
V/µs
mA
µA
°C
°C
V
V
V
A
A
A
V
1

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SB3H100 Summary of contents

Page 1

... °C unless otherwise noted) A TEST CONDITIONS SYMBOL ° 125 ° ° 125 °C J SB3H90 & SB3H100 Vishay General Semiconductor in middle voltage high SB3H90 SB3H100 90 100 90 100 90 100 3.0 100 1.0 10000 - 175 175 SB3H90 SB3H100 ...

Page 2

... SB3H90 & SB3H100 Vishay General Semiconductor THERMAL CHARACTERISTICS (T PARAMETER (1) Maximum thermal resistance Note: (1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) SB3H100-E3/54 1.09 SB3H100-E3/73 1.09 (1) SB3H100HE3/54 1.09 (1) SB3H100HE3/73 1.09 Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES ( °C unless otherwise noted ...

Page 3

... Document Number: 88720 Revision: 20-Aug-07 100 ° 1.0 MHz mVp-p sig 10 1 0.1 100 DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. SB3H90 & SB3H100 Vishay General Semiconductor 0 0 Pulse Duration (s) Figure 6. Typical Transient Thermal Impedance www.vishay.com 100 3 ...

Page 4

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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