PMBD914,235 NXP Semiconductors, PMBD914,235 Datasheet - Page 3

• Manufacturer Part Number: PMBD914,235
• Description: DIODE HIGH SPEED SWITCHING SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBD914,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 1µA @ 75V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 4 ns
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.025 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933856870235; PMBD914 /T3; PMBD914 /T3

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PMBD914_6
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 7.
[1]
[2]
Table 8.
T
[1]
[2]
Symbol
P
T
T
Symbol
R
R
Symbol
V
I
C
t
V
R
rr
amb
j
stg
tot
F
FR
th(j-a)
th(j-t)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
Soldering point of cathode tab.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering point of cathode tab.
When switched from I
When switched from I
= 25 C unless otherwise specified.
j
= 25 C prior to surge.
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
Limiting values
Thermal characteristics
Characteristics
Parameter
total power dissipation
junction temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to tie-point
F
F
Rev. 06 — 11 February 2009
= 10 mA to I
= 10 mA; t
…continued
r
= 20 ns.
R
= 10 mA; R
Conditions
I
I
I
I
V
V
V
V
f = 1 MHz; V
F
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 75 V
= 25 V; T
= 75 V; T
Conditions
T
Conditions
in free air
amb
L
= 100 ; measured at I
j
j
R
25 C
= 150 C
= 150 C
= 0 V
Single high-speed switching diode
[1][3]
[1]
[2]
[1]
[2]
Min
-
-
Min
-
-
Min
-
-
-
-
-
-
-
-
-
-
-
R
65
= 1 mA.
PMBD914
Typ
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
250
150
+150
Max
500
330
Max
715
855
1
1.25
25
1
30
50
1.5
4
1.75
Unit
mW
C
C
Unit
K/W
K/W
Unit
mV
mV
V
V
nA
pF
ns
V
3 of 10
A
A
A