BAS32L,135 NXP Semiconductors, BAS32L,135 Datasheet - Page 3

• Manufacturer Part Number: BAS32L,135
• Description: DIODE SW 75V 200MA H-S SOD80C
• Manufacturer: NXP Semiconductors

Specifications of BAS32L,135

• Package / Case: LL-34, LLDS, MiniMELF, SOD80C
• Voltage - Forward (vf) (max) @ If: 1V @ 100mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: + 200 C
• Maximum Operating Temperature: + 200 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933913910135; BAS32L /T3; BAS32L /T3

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAS32L
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 6.
[1]
Table 7.
T
[1]
[2]
Symbol
P
T
T
T
Symbol
R
R
Symbol
V
I
C
t
V
R
rr
amb
j
amb
stg
tot
F
FR
th(j-a)
th(j-sp)
d
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
When switched from I
When switched from I
= 25
j
= 25 °C prior to surge.
°
C unless otherwise specified.
Limiting values
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Parameter
forward voltage
reverse current
diode capacitance
reverse recovery
time
forward recovery
voltage
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
All information provided in this document is subject to legal disclaimers.
F
F
Rev. 7 — 20 January 2011
= 10 mA to I
= 50 mA; t
…continued
Conditions
I
I
I
V
V
V
V
V
r
F
F
F
= 20 ns.
R
R
R
R
R
R
= 5 mA
= 100 mA
= 100 mA; T
= 20 V
= 75 V
= 20 V; T
= 75 V; T
= 0 V; f = 1 MHz
= 10 mA; R
Conditions
in free air
Conditions
T
amb
j
j
= 150 °C
= 150 °C
L
j
= 100 Ω; measured at I
= 25 °C
= 100 °C
[1]
[1]
[2]
Min
-
-
Min
620
-
-
-
-
-
-
-
-
-
High-speed switching diode
[1]
Min
-
-
−65
−65
R
= 1 mA.
Typ
-
-
Typ
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
Max
500
200
+200
+200
BAS32L
Max
350
300
Max
750
1000
930
25
5
50
100
2
4
2.5
Unit
mW
°C
°C
°C
mV
Unit
K/W
K/W
Unit
mV
mV
nA
μA
μA
μA
pF
ns
V
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