BAV20,133 NXP Semiconductors, BAV20,133 Datasheet - Page 6
![DIODE GP 150V 250MA DO-35](/photos/5/24/52491/do-35_axial_sml.jpg)
BAV20,133
Manufacturer Part Number
BAV20,133
Description
DIODE GP 150V 250MA DO-35
Manufacturer
NXP Semiconductors
Datasheet
1.BAV20133.pdf
(10 pages)
Specifications of BAV20,133
Package / Case
DO-204AH, DO-35, Axial
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 150V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Through Hole
Product
Switching Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
250 mA
Max Surge Current
625 mA
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
100 nA
Maximum Power Dissipation
400 mW
Maximum Diode Capacitance
5 pF
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933189200133
NXP Semiconductors
1999 May 25
handbook, halfpage
handbook, halfpage
General purpose diodes
V
Solid line; maximum values.
Dotted line; typical values.
Fig.5
(1) BAV21.
(2) BAV20.
Fig.7
(μA)
R
I R
V R
(V)
10
10
= V
300
200
100
10
10
10
−1
−2
0
1
Rmax
3
2
0
0
Reverse current as a function of junction
temperature.
Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
.
(1)
(2)
100
100
T amb (
T j (
o
C)
o
C)
MGL588
MGD009
200
200
6
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
1.6
1.4
1.2
1.0
0.8
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
10
BAV20; BAV21
V R (V)
Product data sheet
MGD005
20