BAV21,133 NXP Semiconductors, BAV21,133 Datasheet - Page 4

• Manufacturer Part Number: BAV21,133
• Description: DIODE GP 200V 250MA DO-35
• Manufacturer: NXP Semiconductors

Specifications of BAV21,133

• Package / Case: DO-204AH, DO-35, Axial
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 250mA (DC)
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Capacitance @ Vr, F: 5pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Product: Switching Diodes
• Peak Reverse Voltage: 250 V
• Forward Continuous Current: 250 mA
• Max Surge Current: 625 mA
• Configuration: Single
• Recovery Time: 50 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 100 nA
• Maximum Power Dissipation: 400 mW
• Maximum Diode Capacitance: 5 pF
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 933189210133

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 May 25
V
I
C
t
R
R
SYMBOL
SYMBOL
j
R
rr
= 25 °C unless otherwise specified.
F
General purpose diodes
d
th j-tp
th j-a
forward voltage
reverse current
diode capacitance
reverse recovery time
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
at I
R
I
I
V
V
= 30 mA; R
F
F
R
R
R
= 100 mA
= 200 mA
= 3 mA; see Fig.8
= V
= V
lead length 10 mm
lead length 10 mm; note 1
4
Rmax
Rmax
CONDITIONS
R
; T
L
= 0; see Fig.6
= 100 Ω; measured
j
= 150 °C
CONDITIONS
F
= 30 mA to
−
−
−
−
−
−
MIN.
BAV20; BAV21
1.0
1.25
100
100
5
50
VALUE
Product data sheet
MAX.
240
375
V
V
nA
μA
pF
ns
UNIT
UNIT
K/W
K/W