BAW62,113 NXP Semiconductors, BAW62,113 Datasheet

DIODE SW 75V 250MA H-S DO-35

BAW62,113

Manufacturer Part Number
BAW62,113
Description
DIODE SW 75V 250MA H-S DO-35
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAW62,113

Package / Case
DO-204AH, DO-35, Axial
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Voltage - Dc Reverse (vr) (max)
75V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
5µA @ 75V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Through Hole
Product
Switching Diodes
Peak Reverse Voltage
75 V
Forward Continuous Current
0.25 A
Max Surge Current
4 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
+ 200 C
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933101220113
BAW62 T/R
BAW62 T/R
Product data sheet
Supersedes data of April 1996
DATA SHEET
BAW62
High-speed diode
M3D176
DISCRETE SEMICONDUCTORS
1996 Sep 17

Related parts for BAW62,113

BAW62,113 Summary of contents

Page 1

DATA SHEET BAW62 High-speed diode Product data sheet Supersedes data of April 1996 DISCRETE SEMICONDUCTORS M3D176 1996 Sep 17 ...

Page 2

... NXP Semiconductors High-speed diode FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max • Continuous reverse voltage: max • Repetitive peak reverse voltage: max • Repetitive peak forward current: max. 450 mA. APPLICATIONS • High-speed switching • Fast logic applications. ...

Page 3

... NXP Semiconductors High-speed diode ELECTRICAL CHARACTERISTICS = 25 °C; unless otherwise specified SYMBOL PARAMETER V forward voltage F I reverse current R C diode capacitance d t reverse recovery time rr V forward recovery voltage fr THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to tie-point th j-tp R thermal resistance from junction to ambient ...

Page 4

... NXP Semiconductors High-speed diode GRAPHICAL DATA 300 handbook, halfpage I F (mA) 200 100 0 0 100 Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature handbook, full pagewidth I FSM ( − Based on square wave currents. ...

Page 5

... NXP Semiconductors High-speed diode 3 10 handbook, halfpage I R (μ ( −1 10 − 100 ( maximum values typical values typical values. R Fig.5 Reverse current as a function of junction temperature. 1996 Sep 17 MGD006 handbook, halfpage (2) (3) 200 MHz; T Fig (pF) 1.0 0.8 0.6 0 °C. j Diode capacitance as a function of reverse voltage ...

Page 6

... NXP Semiconductors High-speed diode handbook, full pagewidth D.U. Ω ( mA. R Fig.7 Reverse recovery voltage test circuit and waveforms. I Ω Ω 450 Ω D.U.T. Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 10% SAMPLING OSCILLOSCOPE Ω MGA881 I 90% OSCILLOSCOPE Ω 10% ...

Page 7

... NXP Semiconductors High-speed diode PACKAGE OUTLINE 1.85 max Dimensions in mm. 1996 Sep 17 4.25 25.4 min 25.4 min max Fig.9 SOD27 (DO-35). 7 Product data sheet BAW62 0.56 max mla428 - 1 ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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