BAS116,235 NXP Semiconductors, BAS116,235 Datasheet - Page 4

• Manufacturer Part Number: BAS116,235
• Description: DIODE SW EPITAXIAL MED-SPD SOT23
• Manufacturer: NXP Semiconductors

Specifications of BAS116,235

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 85 V
• Forward Voltage Drop: 1.25 V at 0.15 A
• Recovery Time: 3000 ns
• Forward Continuous Current: 0.215 A
• Max Surge Current: 4 A
• Reverse Current Ir: 0.005 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934032170235; BAS116 /T3; BAS116 /T3

NXP Semiconductors
GRAPHICAL DATA
2003 Dec 12
handbook, full pagewidth
Low-leakage diode
handbook, halfpage
Device mounted on an FR4 printed-circuit board.
Fig.2
Based on square wave currents; T
I FSM
(A)
10
(mA)
10
I F
10
−1
300
200
100
1
2
1
0
Maximum permissible continuous forward
current as a function of ambient temperature.
0
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
j
100
= 25 °C prior to surge.
10
T
amb
( C)
o
MLB755
200
10
4
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
j
j
j
I F
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
300
200
100
0
Forward current as a function of forward
voltage.
0
0.4
10
3
0.8
(1)
t p (µs)
Product data sheet
(2)
1.2
BAS116
MBG704
V
MLB752 - 1
F
(3)
10
(V)
4
1.6