RB751S40,115 NXP Semiconductors, RB751S40,115 Datasheet - Page 4

DIODE SCHOTTKY 40V 120MA SOD-523

RB751S40,115

Manufacturer Part Number
RB751S40,115
Description
DIODE SCHOTTKY 40V 120MA SOD-523
Manufacturer
NXP Semiconductors
Datasheet

Specifications of RB751S40,115

Package / Case
SC-79, SOD-523
Voltage - Forward (vf) (max) @ If
370mV @ 1mA
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
120mA (DC)
Current - Reverse Leakage @ Vr
500nA @ 30V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
2pF @ 1V, 1MHz
Mounting Type
Surface Mount
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934061303115
RB751S40 T/R
RB751S40 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RB751S40,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
RB751_SER_1
Product data sheet
Fig 1. Forward current as a function of forward
Fig 3. Diode capacitance as a function of reverse voltage; typical values
(1) T
(2) T
(3) T
(4) T
(mA)
I
10
10
F
10
10
1
2
1
2
voltage; typical values
f = 1 MHz; T
0
amb
amb
amb
amb
= 125 C
= 85 C
= 25 C
= 40 C
(1) (2)
0.2
amb
= 25 C
(3)
0.4
(4)
0.6
(pF)
C
d
5
4
3
2
1
0
0
0.8
V
mlc361
F
(V)
1
10
Rev. 01 — 21 May 2007
20
Fig 2. Reverse current as a function of reverse
( A)
(1) T
(2) T
(3) T
I
10
10
R
10
10
10
1
30
3
2
1
2
voltage; typical values
0
amb
amb
amb
V R (V)
= 125 C
= 85 C
= 25 C
mlc363
40
10
Schottky barrier single diodes
20
RB751 series
(1)
(2)
(3)
30
© NXP B.V. 2007. All rights reserved.
V R (V)
mlc362
40
4 of 10

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