BAS116T,115 NXP Semiconductors, BAS116T,115 Datasheet - Page 3

• Manufacturer Part Number: BAS116T,115
• Description: DIODE SW SGL LOW LEAK SOT416
• Manufacturer: NXP Semiconductors

Specifications of BAS116T,115

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Voltage - Dc Reverse (vr) (max): 75V
• Current - Average Rectified (io): 215mA (DC)
• Current - Reverse Leakage @ Vr: 5nA @ 75V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: EMT3 (SOT-416, SC-75-3)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063959115

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
BAS116T_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 6.
[1]
[2]
Table 7.
T
[1]
[2]
Symbol
P
T
T
T
Symbol
R
R
Symbol
V
I
t
C
R
rr
amb
j
amb
stg
tot
F
th(j-a)
th(j-sp)
d
Pulse test: t
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering point of cathode tab.
Pulse test: t
When switched from I
= 25
j
= 25 °C prior to surge.
°
C unless otherwise specified.
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Parameter
forward voltage
reverse current
reverse recovery
time
diode capacitance
Limiting values
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
p
p
≤ 300 μs; δ ≤ 0.02.
≤ 300 μs; δ ≤ 0.02.
Rev. 01 — 14 December 2009
F
= 10 mA to I
…continued
Conditions
I
I
I
I
V
V
V
F
F
F
F
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
R
= 75 V
= 75 V; T
= 0 V; f = 1 MHz
= 10 mA; R
Conditions
T
amb
≤ 25 °C
Conditions
in free air
j
= 150 °C
Single low leakage current switching diode
L
= 100 Ω; measured at I
[3]
[1]
[2]
[1]
[2]
Min
-
-
−55
−65
Min
-
-
Min
-
-
-
-
-
-
-
-
R
= 1 mA.
Typ
-
-
Typ
-
-
-
-
0.003 5
3
0.8
2
BAS116T
© NXP B.V. 2009. All rights reserved.
Max
150
150
+150
+150
Max
833
350
Max
0.9
1
1.1
1.25
80
3
-
Unit
mW
°C
°C
°C
Unit
K/W
K/W
3 of 10
Unit
V
V
V
V
nA
nA
μs
pF