1PS79SB30,135 NXP Semiconductors, 1PS79SB30,135 Datasheet - Page 3

• Manufacturer Part Number: 1PS79SB30,135
• Description: DIODE SCHOTTKY 40V 200MA SC79
• Manufacturer: NXP Semiconductors

Specifications of 1PS79SB30,135

• Package / Case: SC-79, SOD-523
• Voltage - Forward (vf) (max) @ If: 600mV @ 200mA
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 500nA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Capacitance @ Vr, F: 20pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 1 A
• Configuration: Single
• Forward Voltage Drop: 0.6 V
• Maximum Reverse Leakage Current: 0.5 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 1PS79SB30 /T3; 1PS79SB30 /T3; 934056394135

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: pulse width = 300 μs; δ = 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SC-79 (SOD523) standard mounting conditions.
2001 Feb 20
V
I
C
R
amb
R
SYMBOL
SYMBOL
F
Schottky barrier diode
d
th j-a
= 25 °C unless otherwise specified.
forward voltage
continuous reverse current
diode capacitance
thermal resistance from junction to ambient note 1
PARAMETER
PARAMETER
see Fig.2
V
V
R
R
I
I
I
I
I
F
F
F
F
F
= 25 V; note 1; see Fig.3
= 1 V; f = 1 MHz; see Fig.4
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 200 mA
3
CONDITIONS
CONDITIONS
190
250
320
440
520
−
−
TYP.
VALUE
450
220
290
360
500
600
0.5
20
1PS79SB30
MAX.
Product data sheet
UNIT
K/W
mV
mV
mV
mV
mV
μA
pF
UNIT