1PS79SB31,135 NXP Semiconductors, 1PS79SB31,135 Datasheet - Page 3
![DIODE SCHOTTKY 30V 200MA SC79](/photos/5/25/52584/568-sod-523_1-1g1a_sc-79_sod523_sml.jpg)
1PS79SB31,135
Manufacturer Part Number
1PS79SB31,135
Description
DIODE SCHOTTKY 30V 200MA SC79
Manufacturer
NXP Semiconductors
Datasheet
1.1PS79SB31315.pdf
(7 pages)
Specifications of 1PS79SB31,135
Package / Case
SC-79, SOD-523
Voltage - Forward (vf) (max) @ If
500mV @ 200mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
30µA @ 10V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Capacitance @ Vr, F
25pF @ 1V, 1MHz
Mounting Type
Surface Mount
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
1 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
30 uA @ 10 V
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
1PS79SB31 /T3
1PS79SB31 /T3
934056795135
1PS79SB31 /T3
934056795135
NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SC-79 (SOD523) standard mounting conditions.
2002 Jan 11
V
I
C
R
SYMBOL
SYMBOL
amb
R
F
Schottky barrier diode
d
th j-a
= 25 °C unless otherwise specified.
forward voltage
continuous reverse current
diode capacitance
thermal resistance from junction to
ambient
p
= 300 μs; δ = 0.02.
PARAMETER
PARAMETER
see Fig.2;
V
V
note 1
R
R
I
I
I
I
I
F
F
F
F
F
= 10 V; note 1; see Fig.3
= 1 V; f = 1 MHz; see Fig.4
= 0.1 mA
= 1 mA
= 10 mA
= 100 mA
= 200 mA
3
CONDITIONS
CONDITIONS
130
190
255
355
420
2.5
20
MIN.
VALUE
450
190
250
300
410
500
30
25
1PS79SB31
MAX.
Product data sheet
UNIT
K/W
mV
mV
mV
mV
mV
μA
pF
UNIT