1PS74SB23,125 NXP Semiconductors, 1PS74SB23,125 Datasheet - Page 3

• Manufacturer Part Number: 1PS74SB23,125
• Description: DIODE SCHOTTKY 25V 1MA SC74
• Manufacturer: NXP Semiconductors

Specifications of 1PS74SB23,125

• Package / Case: SC-74-6
• Voltage - Forward (vf) (max) @ If: 450mV @ 1A
• Voltage - Dc Reverse (vr) (max): 25V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 1mA @ 25V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 100pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 25 V
• Forward Continuous Current: 1 A
• Max Surge Current: 25 A
• Configuration: Single Quad Anode Dual Cathode
• Forward Voltage Drop: 0.45 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 1PS74SB23 T/R; 1PS74SB23 T/R; 934054921125

Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: t
THERMAL CHARACTERISTICS
Note
1. Refer to SC-74 (SOT457) standard mounting conditions.
2003 Aug 04
V
I
C
R
SYMBOL
SYMBOL
amb
R
F
d
th j-a
Schottky barrier diode
= 25 C unless otherwise specified.
forward voltage
reverse current
diode capacitance
thermal resistance from junction to ambient
p
= 300 s; = 0.02.
PARAMETER
PARAMETER
I
I
V
V
f = 1 MHz; V
note 1
3
F
F
R
R
= 100 mA
= 1 A
= 20 V; note 1; see Fig.3
= 25 V; note 1; see Fig.3
CONDITIONS
CONDITIONS
R
= 4 V; see Fig.4
260
400
80
100
TYP.
VALUE
250
1PS74SB23
Product specification
300
450
500
1
MAX.
UNIT
K/W
mV
mV
mA
pF
UNIT
A